Fairchild Semiconductor KSB596 Datasheet
KSB596
KSB596
Power Amplifier Applications
• Complement to KSD526
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 80 V
Collector-Emitter Voltage - 80 V
Emitter-Base Voltage - 5 V
Collector Current(DC) - 4 A
Base Current - 0.4 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
Collector Cut-off Current V
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A - 1 - 1.7 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 80 V
Emitter-Base Breakdown Voltage IE = - 10mA, IC = 0 - 5 V
Emitter Cut-off Current V
DC Current Gain
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 80V, IE = 0 - 70 µA
CB
= - 5V, IC = 0 - 100 µA
EB
V
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 3A - 1 - 1.5 V
CE
= - 5V, IC = - 0.5A 3 MHz
CE
= - 10V, IE = 0
CB
f = 1MHz
40
15
240
130 pF
hFE Classification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSB596
-4.0
-3.2
-2.4
-1.6
-0.8
Ic[A], COLLECTOR CURRENT
0
-4
-3
-2
-1
[A], COLLECTOR CURRENT
C
I
0
IB = -140mA
IB = -160mA
IB = -180mA
= -120mA
B
I
= -100mA
I
B
= -80mA
I
B
IB = -60mA
1000
100
IB = -40mA
IB = -20mA
IB = 0mA
-1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
, DC CURRENT GAIN
FE
h
1
-0.001 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VCE = -5V
-0.4 -0.8 -1.2 -1.6
VBE[V], BASE-EMITTER VOLTAGE
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.001 -0.01 -0. 1 -1 -10
IC[A], COLLECTOR CURRENT
VCE = -5V
IC = 10 I
B
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
-200
-160
-120
-80
-40
[mA], COLLECTOR CURRENT
C
I
0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
VCE = -5V
-10
Ic Max(Pulse)
Ic Max(Continuous)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -1 0 0
DC(Tc=25
100ms
o
C)
1ms
10ms
1s
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A, February 2000
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