Fairchild Semiconductor KSB564A Datasheet
KSB564A
Audio Frequency Power Amplifier
• Complement to KSD471A
• Collector Current : I
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
= -1A
C
= 800mW
C
KSB564A
1
1. Emitter 2. Base 3. Collector
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current -1.0 A
Collector Power Dissipation 800 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -1A, IB= -0.1A -0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC= -1A, IB= -0.1A -1.2 V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -30 V
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -25 V
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
Collector Cut-off Current VCB= -30V, IE=0 -0.1 µA
DC Current Gain VCE= -1V, IC= -100mA 70 400
Current Gain Bandwidth Product VCE= -6V, IC= -10mA 110 MHz
Output Capacitance VCB= -6V, IE=0, f=1MHz 18 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y G
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSB564A
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
[A], COLLECTOR CURRENT
-0.2
C
I
-0.1
0.0
IB = -8mA
0-1-2-3-4-5-6-7-8-9-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -1mA
IC = 10 I
1000
VCE=-1.0V
100
10
, DC CURRENT GAIN
FE
h
1
-10
-100 -1000
IC[mA], COLLECTOR CURRENT
B
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
f = 1MHz
IE=0
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 4. Collector Output Capacitance
-10
VCE = -6V
-1
-0.1
[A], COLLECTOR CURRENT
C
I
10
100
-0.01
VCE[V], COLLECTOR-EMITTER VOLTAGE
1.TC=25oC
2.Single pulse
200ms
DC
-10-1
-100
Rev. A1, June 2001
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