Fairchild Semiconductor KSB546 Datasheet
KSB546
TV Vertical Deflection Output
• Collector-Base Voltage : V
• Collector Current : l
• Collector Dissipation : P
C
= -2A
• Complement to KSD401
PNP Epitaxial Silicon Transistor
= -200V
CBO
= 25W (TC=25°C)
C
1
TO-220
1.Base 2.Collector 3.Emitter
KSB546
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 200 V
Collector-Emitter Voltage - 150 V
Emitter-Base Voltage - 5 V
Collector Current(DC)Y - 2 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
ICBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA - 1 V
CE
f
T
Collector-Base Breakdown Voltage IC = - 500µA, IE = 0 - 200 V
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 150 V
Emitter-Base Breakdown Voltage IE = - 500uA, IC = 0 - 5 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
= - 150V, IE = 0 - 50 µA
CB
= - 10V , IE = - 0.4A 40 240
CE
= - 10V , IC = - 0.4A 5 MHz
CE
hFE Classification
Classification R O Y
h
FE
40 ~ 80 70 ~ 140 120 ~ 240
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSB546
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
[A], COLLECTOR CURRENT
-0.2
C
I
-0.1
-0.0
-0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
IB = -8mA
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
VCE[V], COLLECTOR-EMITT E R VOL TA G E
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
IC = 10 I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
VBE(sat)
IC[A], COLLECTOR CURRENT
VCE(sat)
IB = -3mA
IB = -2mA
IB = -1mA
1000
VCE = -10V
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
1000
f=1MHz
=0
I
E
100
[pF], CAPACITANCE
ob
C
10
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
℃
1. Tc=25
2. *single pulse
Thermal limit ation
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
*1ms
S/B limitation
S/B limitation
Figure 4. Collector Output Capacitance
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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