Fairchild Semiconductor KSB1366 Datasheet
KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012
KSB1366
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
PC
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current(DC) - 3 A
Base Current - 0.5 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Ty p. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.5 - 1 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 7V, IC = 0 - 100 µA
EB
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 0.5A - 0.7 - 1 V
CE
= - 5V, IC = - 0.5A 9 MHz
CE
100
20
320
hFE Classification
Classification Y G
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
100 ~ 200 150 ~ 320
Typical Characteristics
KSB1366
= -80mA
B
I
= -70mA
B
I
= -60mA
I
B
= -50mA
I
B
IB = -40mA
1000
100
IB = -30mA
IB = -20mA
IB = -10mA
IB = 0
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
-5
-4
-3
-2
[A], COLLECTOR CURRENT
-1
C
I
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
IC = 10 I
B
-4
-3
-2
VCE = -5V
VCE = -5V
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
-1
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.4 -0.8 -1.2 -1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
ICmax(pulse)
ICmax(DC)
100mS
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
1mS
10ms
1S
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
40
35
30
25
MAX
CEO
V
20
15
10
[W], POWER DISSIPATION
D
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Fig ure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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