Fairchild Semiconductor KSB1149 Datasheet
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
• High DC Current Gain
• High Power Dissipation : P
PNP Silicon Darlington Transistor
=1.3W (Ta=25°C)
C
1
TO-126
1. Emitter 2.Collector 3.Base
KSB1149
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 8 V
Collector Current (DC) - 3 A
*Collector Current (Pulse) - 5 A
Collector Dissipation (Ta=25°C) 1.3 W
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
V
BE
t
ON
t
STG
t
F
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
= - 100V, IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 2 mA
EB
= - 2V, IC = - 1.5A
CE
V
= - 2V, IC = - 3A
CE
2000
1000
20000
(sat) * Collector-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 0.9 - 1.2 V
(sat) * Base-Emitter Sat uration Voltage IC = - 1.5A, IB = - 1.5mA - 1.5 - 2 V
Turn ON Time V
Storage Time 2 µs
Fall Time 1 µs
= - 40V, IC = - 1.5A
CC
= - IB2 = - 1.5mA
I
B1
= 27Ω
R
L
0.5 µs
hFE Classification
Classification O Y G
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
2000 ~ 5000 4000 ~ 12000 6000 ~ 20000
Typical Characteristics
KSB1149
-5
=-1mA
B
-4
IB=-900uA
IB=-800uA
IB=-700uA
IB=-600uA
-3
-2
-1
Ic[A], COLLECTOR CURRENT
-0
-0 -1 -2 -3 -4 -5
I
IB=-200uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-100
-10
-1
(sat)[V], SATURATION VOLTA GE
CE
(sat), V
BE
V
-0.1
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
-0.1 -1 -10
IB=-500uA
IB=-400uA
IB=-300uA
IB=-100uA
Ic = 1000 I
Pulsed
100000
VCE = -2V
Pulsed
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
200ms
10ms
1ms
s/b Limited
300us
100us
B
-10
Ic(Pulse)
Ic(DC)
Dissipation Limited
-1
-0.1
[A], COLLECTOR CURRENT
C
I
Tc=25oC
Single Pulse
-0.01
-1 -10 -100 500
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
Base-Emitter Saturation Voltage
[%], Ic DERATING
T
d
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175 200
s/b LIMITED
DISSIPATION LIMITED
TC[oC], CASE TEMPERATURE
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 7 5 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Loading...