Fairchild Semiconductor KSB1116A, KSB1116 Datasheet
KSB1116/1116A
Audio Frequency Power Amplifier & Medium
Speed Swit ching
• Complement to KSD1616/1616A
KSB1116/1116A
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) -2 A
I
CP
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector-Base Voltage : KSB1116
Collector-Emitter Voltage : KSB1116
Emitter-Base Voltage -6 V
Collector Current (DC) -1 A
Collector Power Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(on) * Base-Emitter On Voltage VCE= -2V, IC= -50mA -600 -650 -700 mV
BE
(sat) * Collector-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.2 -0.3 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.9 -1.2 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
* Pulse Test: PW ≤350µs, Duty Cycle≤2%
Collector Cut-off Current VCB= -60V , IE=0 -100 nA
Emitter Cut-off Current VEB= -6V, IC= 0 -100 nA
* DC Current Gain : KSB1116
: KSB1116A
Output Capacitance VCB= -10V , IE=0, f=1MHz 25 pF
Current Gain Bandwidth Product VCE= -2V, IC= -100mA 70 120 MHz
Turn On Time VCC= -10V, IC= -100mA
Storage Time 0.7 µs
Fall Time 0.07 µs
Ta=25°C unless otherwise noted
: KSB1116A
: KSB1116A
Ta=25°C unless otherwise noted
VCE= -2V, IC= -100mA
V
= -2V, IC = -1A
CE
I
= -IB2= -10mA
B1
(off)= 2~3V
V
BE
135
135
81
-60
-80
-50
-60
600
400
0.07 µs
V
V
V
V
hFE Classification
Classification Y G L
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002
135 ~ 270 200 ~ 400 300 ~ 600
Typical Characteristics
KSB1116/1116A
-100
-80
IB = -250µA
IB = -200µA
IB = -150µA
-60
IB = -100µA
-40
-20
[mA], COLLECTOR CURRENT
C
I
0
0-2-4-6-8-10
IB = -50µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[mA], COLLECTOR CURRENT
VCE = -2V
-1.0
-0.8
IB = -5.0mA
IB = -4.5mA
IB = -3.5mA
IB = -3.0mA
IB = -4.0mA
IB = -2.5mA
-0.6
-0.4
[A], COLLECTOR CURRENT
-0.2
C
I
0.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
IB = -2.0mA
IB = -1.5mA
IB = -1.0mA
IB = -0.5mA
VCE[V], COLLECTOR-EMITTER V OLT AG E
VBE(sat)
VCE(sat)
IC = 20 I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
-0.001 -0.01 -0.1 -1
VCC = -10V
IC = 10IB1 = -10I
t
STG
t
F
t
ON
IC[A], COLLECTOR CURRENT
1000
B2
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
IE=0
f = 1MHz
Figure 5. Switching Time Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002
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