Fairchild Semiconductor KSB1098 Datasheet
Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1589
KSB1098
KSB1098
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
IB
P
C
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 7 V
Collector Current (DC) - 5 A
*Collector Current (Pulse) - 8 A
Base Current - 0.5 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 1.5 V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 2 V
V
BE
t
ON
t
STG
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Turn ON Time V
Storage Time 1 µs
Fall Time 1 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 100V, IE = 0 - 1 µA
CB
= - 5V, IC = 0 - 3 mA
EB
= - 2V, IC= - 3A
CE
= - 2V, IC = - 5A
V
CE
= - 50V, IC = - 3A
CC
= - IB2 = - 3mA
I
B1
R
= 17Ω
L
2000
500
15K
0.5 µs
hFE Classification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
2000 ~ 5000 3000 ~ 7000 5000 ~ 15000
Typical Characteristics
KSB1098
= -2mA
B
I
= -1.5mA
I
B
-5
IB = -10mA
-4
IB = -6mA
IB = -4mA
IB = -1.0mA
-3
-2
-1
Ic[A], COLLECTOR CURRENT
-0 -1 -2 -3 -4 -5
VCE[V], CO LLECT OR-EM I TTER V OLTAG E
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100us
s/b Limited
50us
300us
1ms
-100
-10
100ms
-1
-0.1
-0.01
[A], COLLECTOR CURRENT
C
I
-0.001
-1 -10 -100 -1000 -10000
Dissipation
Limited
10ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = -0.8mA
IB = -0.6mA
IB = -0.4mA
-10
IC = 1000 I
B
VBE(sat)
-1
VCE(sat)
-0.1
(sat)[V] SATURATION VOLTAGE
BE
(sat)[V],V
CE
V
-0.01
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
-10
-9
-8
-7
-6
-5
-4
-3
-2
[A], COLLECTOR CURRENT
C
I
-1
-0
-20 -40 -60 -80 -100 -120 -140 -160 -180 -200
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area Figure 4. Reverse Bias Safe Operating Area
32
28
24
20
16
12
8
[W], POWER DISSIPATION
D
P
4
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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