Fairchild Semiconductor KSB1097 Datasheet
Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1588
KSB1097
KSB1097
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Collector-Base Voltage - 80 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current (DC) - 7 A
*Collector Current (Pulse) - 15 A
Base Current - 3.5 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V
V
BE
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 10 µA
EB
= - 1V, IC = - 3A
CE
V
= - 1V, IC = - 5A
CE
40
20
200
hFE Classification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120 100 ~ 200
Typical Characteristics
KSB1097
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
[A], COLLECTOR CURRENT
C
I
-0.1
-0.0
-0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
IB = -20mA
IB = -18mA
IB = -16mA
IB = -14mA
IB = -12mA
IB = -10mA
IB = -8mA
IB = -6mA
VCE [V], COLLECTOR-EMITTER VOLTAG E
IB = -4mA
IB = -2mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1E-3 -0.01 -0.1 -1 -10
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
-1
-0.1
(sat) [V], SATURATION VOLTAGE
CE
(sat), V
-0.01
BE
-1E-3 -0.01 -0.1 -1 -10
V
VBE(sat)
VCE(sat)
IC [A], COLLECTOR CURRENT
IC=10I
B
40
35
30
25
20
15
10
[W], POWER DISSIPATION
D
P
5
0
0 25 50 75 100 125 150 175 200
Tc [oC], CASE TEMPERATURE
VCE = -1V
Figure 3. Saturation Voltage Figure 4. Power Derating
160
140
120
100
80
60
40
dT [%], Ic DERATING
20
DISSIPATION LIMITED
0
0 25 50 75 100 125 150 175 200
Tc [OC], CASE TEMPERATURE
Figure 5. Power Derating Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
s/b LIMITED
100mS
50uS
100uS
300uS
1mS
10mS
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100 -1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Rev. A, February 2000
Loading...