Fairchild Semiconductor KSB1023 Datasheet
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSD1413
KSB1023
KSB1023
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
I
P
P
CBO
CEO
EBO
C
CP
B
C
C
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 40 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 3 A
Collector Current (Pulse) - 6 A
Base Current - 0.3 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
T
STG
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage IC = - 25mA, IB = 0 - 40 V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 1.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 2 V
V
BE
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Turn ON Time V
Storage Time 0.6 µs
Fall Time 0.25 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 20 µA
CB
= - 5V, IC = 0 - 2.5 mA
EB
= - 2V, IC = - 1A
CE
V
= - 2V, IC = - 3A
CE
= - 30V, IC = - 3A
CC
= - IB2 = - 6mA
I
B1
= 10Ω
R
L
2000
1000
0.3 µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSB1023
-5
-4
-3
-2
[A], COLLECTOR CURRENT
-1
C
I
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
= -300uA
I
B
= -275uA
I
B
= -250uA
I
B
= -225uA
I
B
IB = -200uA
IB = -175uA
IB = 0
10k
1k
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
VBE(sat)
-1
VCE(sat)
IC = 500 I
B
-4
-3
-2
VCE = -2V
VCE = -2V
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturating Voltage
100mS
1mS
10ms
MAX
CEO
V
10
IC,max(pulse)
IC,max(DC)
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
VCE[V], COLLECTOR-EMITTE R VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
-1
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.8 -1.6 -2.4 -3.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
32
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
050100150
TC[oC], CASE TEMPERATURE
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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