Fairchild Semiconductor KSB1022 Datasheet
KSB1022
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSD1417
KSB1022
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transisto
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
I
P
P
T
T
CBO
CEO
EBO
C
CP
B
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 7 A
Collector Current (Pulse) - 10 A
Base Current - 0.7 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 6mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 3A, IB = - 6mA - 1.55 - 2.5 V
V
BE
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Turn ON Time V
Storage Time 2 µs
Fall Time 2.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 5V, IC = 0 - 4 mA
EB
= - 3V, IC = - 3A
CE
V
= - 3V, IC = - 7A
CE
= - 7A, IB = - 14mA
I
C
= - 45V, IC = - 3A
CC
= - IB2 = - 6mA
I
B1
R
= 15Ω
L
2000
15000
1000
- 0.95
- 1.3
- 1.5
- 2
0.8 µs
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSB1022
IB = -2mA
IB = -1.5mA
-10
-8
-6
-4
[A], COLLECTOR CURRENT
-2
C
I
-0
-0 -2 -4 -6 -8 -10
IB = -2.5mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -1mA
IB = -0.5mA
IB = 0
Ic = 500 I
100k
10k
VCE = -3V
1k
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
B
-10
-9
-8
-7
-6
-5
-4
-3
-2
[A], COLLECTOR CURRENT
C
I
-1
-0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
VCE = -3V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-100
ICmax(pulse)
-10
ICmax(DC)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
100mS
10ms
1mS
100uS
Figure 4. Base-Emitter On Voltage
40
35
30
25
MAX
CEO
V
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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