Fairchild Semiconductor KSB1015 Datasheet
Low Frequency Power Amplifier
• Low Collector Emitter Saturation Voltage
• Complement to KSD1406
KSB1015
KSB1015
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current(DC) - 3 A
Base Current - 0.5 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturat ion Voltage IC = - 3A, IB = - 0.3A - 0.5 - 1 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.7 µs
Fall Time 0.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 7V, IC = 0 - 100 µA
EB
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 0.5A - 0.7 - 1 V
CE
= - 5V, IC = - 0.5A 9 MHz
CE
= - 10V, f = 1MHz 150 pF
CB
= - 30V, IC = - 1A
CC
= -IB2 = -0.2A
I
B1
= 30Ω
R
L
60
20
200
0.4 µs
hFE Classification
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200
Typical Characteristics
KSB1015
-5
-4
-3
-2
[A], COLLECTOR CURRENT
-1
C
I
-0
-0 -1 -2 -3 -4 -5
IB = -80mA
IB = -70mA
IB = -60mA
IB = -50mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IB = -40mA
IB = -30mA
IB = -20mA
IB = -10mA
IC = 10 I
IB = 0
B
1k
100
VCE = -5V
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
-4
VCE = -5V
-3
-2
-1
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.4 -0.8 -1.2 -1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
ICmax(pulse)
ICmax(DC)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECT OR -EMITTER VOL T AGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
40
100mS
10ms
1mS
1S
DC
MAX
CEO
V
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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