Fairchild Semiconductor KSA916 Datasheet
Audio Power Amplifier
• Driver Stage Amplifier
• Complement to KSC2316
KSA916
KSA916
1
1. Emitter 2. Collector 3. Base
TO-92L
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -800 mA
Collector Power Dissipation 900 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -1 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC= -1mA IE=0 -120 V
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -120 V
Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V
Collector Cut-off Current VCB= -120V, IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -10mA
Current Gain Bandwidth Product VCE= -5V, IC= -100mA 120 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 40 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -5V, IC= -100mA
CE
60
80 240
hFE Classification
Classification O Y
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
80 ~ 160 120 ~ 240
Typical Characteristics
KSA916
IB = -15mA
IB = -10mA
-1000
-800
-600
-400
-200
[mA], COLLECTOR CURRENT
C
I
0
0-2-4-6-8-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Fi gure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VCE(sat)
IB = -7mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
IB = 0
IC = 10 I
1000
VCE = -5V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
Ic[mA], COLLECTOR CURRENT
B
-1000
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-1000
-100
[mA], COLLECTOR CURRENT
C
I
-10
-1
-1
-1 -10 -100
VCE[V], CO LLEC TOR-E MITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
DC Operating
T
C
= 25
Single pulse
1ms
10ms
100ms
℃
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[W], POWER DISSIPATION
C
P
0.5
0.0
0 25 50 75 100 125 150 175
T
C
T
a
Ta[oC], AMBIENT TEMPERATURE
Rev. A1, June 2001
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