Fairchild Semiconductor KSA733 Datasheet
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSA733
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Electrical Characteristics
Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -60 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -150 mA
P
C
Collector Power Dissipation 250 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -60 V
BV
CEO
Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 V
BV
EBO
Emitter-Base Breakdown Voltage IE = -10µA. IC=0 - 5 V
I
CBO
Collector Cut-off Current VCB= --60V, IE=0 -100 nA
I
EBO
Emitter Cut-off Current VEB= -5V, IC=0 -100 nA
h
FE
DC Current Gain VCE= -6V, IC= -1mA 40 700
V
CE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V
V
BE
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V
f
T
Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz
C
ob
Output Capacitance VCB= -10V , IE = 0, f=1MHz 2.8 pF
NF Noise Figure V
CE
= -6V, IC= -0.3mA
f=1MHz, Rs=10kΩ
6.0 20 dB
Classification R O Y G L
h
FE
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
KSA733
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation
KSA733
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = -400µA
IB = -350µA
IB = -300µA
IB = -200µA
IB = -150µA
IB = -100µA
IB = -250µA
IB = -50µA
I
C
[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTE R VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
VCE = -6V
h
FE
, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE = -6V
I
C
[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
IE = 0
f = 1MHz
C
ob
[pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
VCE = -6V
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
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