Fairchild Semiconductor KSA539 Datasheet
KSA539
Low Frequency Amplifier
• Complement to KSC815
• Collector-Base Voltage: V
• Collector Power Dissipation: P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
CBO
= -60V
= 400mW
C
KSA539
1
1. Emitter 2. Base 3. Collector
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -60 V
Collector-Emitter Voltage -45 V
Emitter-Base Voltage -5 V
Collector Current -200 mA
Collector Power Dissipation 400 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
Collector-Base Breakdown Voltage IC = -100µA, IE =0 -60 V
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(on) Base-Emitter On Voltage VCE= -1V, IC= -10mA -0.60 -0.65 -0.90 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA -0.25 -0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC= -150mA, IB= -15mA -0.9 -1.2 V
V
BE
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -45 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -45V , IE=0 -100 nA
Emitter Cut-off Current VEB= -3V, IC=0 -100 nA
DC Current Gain VCE= -1V IC= -50mA 40 240
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSA539
-200
-180
-160
-140
-120
-100
-80
-60
[mA], COLLECTOR CURRENT
-40
C
I
-20
-0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
IB =-0.8mA
IB =-0.7mA
IB =-0.6mA
IB =-0.5mA
IB =-0.4mA
IB =-0.3mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
Ic = 10I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -400
IC[mA], COLLECTOR CURRENT
(sat)
V
BE
(sat)
CE
V
IB =-0.2mA
IB =-0.1mA
1000
VCE = -1V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
-200
VCE = -1V
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
f = 1MHz
IE= 0
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
Rev. A1, June 2001
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