Fairchild Semiconductor KSA1943 Datasheet
Audio Power Amplifier
• High Current Capability IC = -13A
• High Power Dissipation
•Wide S.O.A
• Complement to KSC5200
KSA1943
KSA1943
1
1.Base 2.Collector 3.Emitter
TO-264
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage -230 V
Collector-Emitter Voltage -230 V
Emitter-Base Voltage -5 V
Collector Current -13 A
Base Curre nt -1.5 A
Collector Dissipation (TC=25°C) 130 W
Junction Temperature 150 °C
Storage Temperature - 50 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V
V
CE
(on) Base-Emitter ON Voltage VCE=-5V, IC=-7A -1.0 -1.5 V
V
BE
f
T
C
ob
* Pulse Test : PW=20us
Collector-Base Breakdown Voltage IC=-5mA, IE=0 -230 V
Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -230 V
Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V
Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA
Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA
* DC Current Gain VCE=-5V, IC=-1A 55 160
DC Current Gain VCE=-5V, IC=-7A 35 60
Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz
Output Capacitance VCB=-10V, f=1MHz 360 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
*hFE Classificatio n
Classification R O
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001
55 ~ 110 80 ~ 160
Typical Characteristics
KSA1943
-20
-18
-16
-14
-12
-10
-8
-6
-4
Ic[mA], COLLECTOR CURRENT
-2
-0 -2 -4 -6 -8 -10
IB = -1A
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
IC = 10 I
B
1
0.1
= -600mA
I
B
= -500mA
I
B
= -400mA
I
B
IB = -300mA
IB = -200mA
IB = -100mA
IB = -900mA
IB = -800mA
IB = -700mA
VCE = -5V
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
14
12
VCE = 5V
10
8
6
0.01
(sat)[V], SATURATION VOLTAGE
CE
V
1E-3
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
4
[A], COLLECTOR CURRENT
C
2
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
-100
IC MAX. (Pulsed*)
-10
IC MAX. (DC)
10ms*
100ms*
DC
-1
-0.1
[A], C OLLEC T OR CURRE NT
*SINGLE NONREPETITIVE
C
I
PULSE TC=25[oC]
-0.01
110100
VCE [V], C OLLEC T OR-EM IT T ER V OLT AGE
160
140
120
100
80
60
40
[W], POWER DISSIPATION
C
P
20
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
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