Fairchild Semiconductor KSA1614 Datasheet
Low Frequency Power Amplifier
Power Regulator
• Collector-Base Voltage : V
• Collector Dissipation : P
= - 80V
CBO
=20W (TC=25°C)
C
KSA1614
KSA1614
1
1.Base 2.Collector 3.Emitter
TO-220F
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 80 V
Collector-Emitter Voltage - 55 V
Emitter-Base Voltage - 5 V
Collector Current - 3 A
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.1A - 0.15 - 0.5 V
V
BE
Collector-Base Breakdown Voltage IC = - 500µA, IE = 0 - 80 V
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 55 V
Emitter-Base Breakdown Voltage IE = - 500µA, IC = 0 - 5 V
Collector Cut-off Current V
DC Current Gain V
=25°C unless otherwise noted
C
TC=25°C unless otherwise noted
= - 50V, IB = 0 - 50 µA
CB
= - 5V, IC = - 0.5A 40 240
CE
hFE Classification
Classification R O Y
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSA1614
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
Ic[A], COLLECTOR CURRENT
-0.2
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = -10mA
IB = -9mA
IB = -8mA
IB = -7mA
IB = -6mA
IB = -5mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
-0.1 -1
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
Ic = 10 I
1000
VCE = -5V
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
B
1000
f = 1MHz
IE=0
100
[pF], CAPACITANCE
OB
C
10
-1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
1ms
DC
32
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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