Fairchild Semiconductor KSA1381 Datasheet
CRT Display, Video Output
• High Collector-Emitter Breakdown Voltage : V
• Low Reverse Transfer Capacitance : C
= 2.3pF at VCB = -30V
re
KSA1381
= -300V
CEO
KSA1381
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
P
T
T
CBO
CEO
EBO
C
CP
C
C
J
STG
Collector-Base Voltage - 300 V
Collector-Emitter Voltage - 300 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 100 mA
Collector Current (Pulse) - 200 mA
Collector Dissipation (TC=25°C) 7 W
Collector Dissipation (Ta=25°C) 1.2 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 1 V
V
BE
f
T
C
ob
C
re
Collector-Base Breakdown Voltage IC = - 10µA, IE = 0 - 300 V
Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V
Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 - 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Reverse Transfer Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 200V, IE = 0 - 0.1 µA
CB
= - 4V, IC = 0 - 0.1 µA
EB
= - 10V, IC = - 10mA 40 320
CE
= - 30V, IC = - 10mA 150 MHz
CE
= - 30V, f = 1MHz 3.1 pF
CB
= - 30V, f = 1MHz 2.3 pF
CB
h
Classification
FE
Classification C D E F
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSA1381
-20
-16
-12
IB = -140
IB = -120
IB = -100
IB = -80
IB = -60
-8
IB = -40
[A], COLLECTOR CURRENT
-4
C
I
-0
-0 -2 -4 -6 -8 -10
IB = -20
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
㎂
㎂
㎂
㎂
㎂
㎂
㎂
㎂
-10
-8
-6
-4
[A], COLLECTOR CURRENT
-2
C
I
-0
-0 -20 -40 -60 -80 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1k
100
, DC CURRENT GAIN
FE
h
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
VCE = -10V
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
㎂
IB = -60
㎂
IB = -50
㎂
IB = -40
㎂
IB = -30
㎂
IB = -20
㎂
IB = -10
㎂
IB = 0
Ic = 10 I
B
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
1000
100
10
1
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
T
f
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Base-Emitter On Voltage
©2000 Fairchild Semiconductor International
Collector-Emitter Saturation Voltage
VCE = -30V
-160
-140
-120
-100
-80
-60
-40
[mA], COLLECTOR CURRENT
C
-20
I
-0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = -10V
Rev. A, February 2000
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