Fairchild Semiconductor KSA1378 Datasheet
Low Frequency Power Amplifier
• Collector Power Dissipation : PC= 300mW
• Complement to KSC3488
KSA1378
KSA1378
1
1.Emitter 2. Collector 3. Base
TO-92S
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) -500 mA
I
CP
P
C
T
J
T
STG
* PW≤10ms, Duty cycle≤50%
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current (DC) -300 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -300mA, IB= -30mA -0.35 -0.6 V
V
CE
* Pulse Test: PW≤350µs, Duty cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -30 V
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -25 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 nA
Collector Cut-off Current VCB= -25V, IE=0 -100 mA
Emitter Cut-off Current VEB= -3V, IC=0 -100 nA
* DC Current Gain VCE= -1V, IC= -50mA 70 400
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y G
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSA1378
-200
-180
-160
-140
-120
-100
-80
-60
[mA], COLLECTOR CURRENT
-40
C
I
-20
IB =-1.6mA
IB =-1.4mA
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
IB =-1.2mA
IB =-1.0mA
IB =-0.8mA
IB =-0.6mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat)
CE
V
(sat)
-10
Ic = 10 I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
IB =-0.4mA
IB =-0.2mA
1000
VCE = -1V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
-1000
VCE = -1V
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
0 -0.2 -0.4 -0.6 -0.8 -1. 0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
20
f = 1MHz
IE=0
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100 -300
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
Rev. A1, June 2001
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