Fairchild Semiconductor KSA1304 Datasheet
Vertical Output Applications
Power Amplifier Applications
• Complement to KSC3296
KSA1304
KSA1304
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage - 150 V
Collector-Emitter Voltage - 150 V
Emitter-Base Voltage - 5 V
Collector Current - 1.5 A
Base Current - 0.5 A
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics T
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= - 500mA, IB = - 50mA - 1.5 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
=25°C unless otherwise noted
C
= - 120V, IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 10 µA
EB
= - 10V, IC = - 500mA 40 75 140
CE
= - 10V, IC = - 500mA - 0.65 - 0.75 - 0.85 V
CE
= - 10V, IC = - 500mA 4 MHz
CE
= - 10V, f = 1MHz 55 pF
CB
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSA1304
-2.0
-1.6
IB = -150mA
IB = -100mA
IB = -50mA
IB = -40mA
-2.0
= -150mA
B
I
-1.6
= -100mA
B
I
IB = -30mA
-1.2
-0.8
[A], COLLECTOR CURRENT
-0.4
C
I
-0.0
-0 -4 -8 -12 -16 -20
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = -20mA
IB = -15mA
IB = -10mA
IB = -5mA
IB = 0mA
-1.2
-0.8
[A], COLLECTOR CURRENT
-0.4
C
I
-0.0
-0 -4 -8 -12 -16 -20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
VCE = -10V
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
= -50mA
B
I
IB = -40mA
IB = -30mA
IB = -20mA
IB = -15mA
IB = -10mA
IB = -5mA
IB = 0mA
IC = 10 I
B
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
-10
IC MAX. (Pulse)
IC MAX. (DC)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Fig ure 6. Power Derating
©2000 Fairchild Semiconductor International
Dissipation
limitation
100ms
32
10ms
1s
S/B limitation
MAX.
CEO
V
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
050100150
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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