Fairchild Semiconductor KSA1298 Datasheet
KSA1298
KSA1298
Low Frequency Power Amplifier
• Complement to KSC3265
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
Collector Power Dissipation 200 mW
C
T
J
T
STG
• Refer to KSA643 for graphs.
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current -800 mA
Base Current -160 mA
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -20mA -0.4 V
CE
(on) Base-Emitter On Voltage VCE= -1V, IC= -10mA -0.5 -0.8 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -25 V
Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V
Collector Cut-off Current VCB= -30V, IE=0 -100 nA
Emitter Cut-off Current VBE= -5V, IC=0 -100 nA
DC Current Gain VCE= -1V, IC= -100mA
Current Gain Bandwidth Product VCE= -5V, IC= -10mA 120 MHz
Output Capacitance VCB= -10V, IE= 0, f=1MHz 13 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= -1V, IC= -800mA
V
CE
100
40
320
h
Classification
FE1
Classification O Y
h
FE1
Marking
100 ~ 200 160 ~ 320
J1O
hFE grade
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Package Demensions
0.40
±0.03
KSA1298
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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