Fairchild Semiconductor KSA1281 Datasheet
Audio Power Amplifier
• Collector Power Dissipation : PC=1W
• 3 Watt Output Application
KSA1281
KSA1281
1
1. Emitter 2. Collector 3. Base
TO-92L
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -2 A
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -55 ~ +150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Base-Emitter Saturation Voltage IC= -1A, IB= -0.05mA -1.2 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC= -1A, IB= -0.05mA -0.5 V
V
CE
C
ob
f
T
Collector-Base Breakdown Voltage IC= -100, IE=0 -50 V
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V
Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V
Collector Cut-off Current VCB= -50V, IE=0 -100 nA
Emitter Cut-off Current VEB= -5V, IC=0 -100 nA
DC Current Gain VCE= -2V, IC= -500mA
Output Capacitance VCB= -10V, IE=0, f=1MHz 40 pF
Current Gain Bandwidth Product VCE= -2V, IC= -500mA 100 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -2V, IC= -1.5A
CE
70
40
240
h
Classification
FE1
Classification O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
70 ~ 140 120 ~ 240
Typical Characteristics
KSA1281
-1400
-1200
-1000
-800
-600
-400
[mA], COLLECTOR CURRENT
C
I
-200
0
0 -2-4-6-8-10-12-14-16
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage
-1
IC = 50I
B
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-1
-1 -10 -100 -1000
-10
IC[mA], COLLECTOR CURRENT
Ta = 25oC
-100
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
-1000
-1
IC = 50I
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1
-1 -10 -100 -1000
-10
Ta = 25oC
-100
B
-1000
IC[mA], COLLECTOR CURRENT
-1400
-1200
-1000
-800
-600
-400
[mA], COLLECTOR CURRENT
-200
C
I
0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VCE = -2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
IC(MAX)PLUS
IC(MAX)
-1
-0.1
[mA], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Ta=25oC
D.C.
OPERATION
1ms
1s
V
MAX
CEO
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISSIPATION
D
P
0.2
0.0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Rev. A1, June 2001
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