Fairchild Semiconductor KSA1244 Datasheet
High Current Switching
• Low Collector-Emitter Saturation Voltage
• Complement to KSC3074
KSA1244
KSA1244
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
P
T
T
CBO
CEO
EBO
B
C
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 50 V
Emitter-Base Voltage - 5 V
Base Current - 1 A
Collector Current - 5 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
(Sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.15A -0.5 V
CE
(Sat) Base-Emitter Saturation Voltage IC = - 3A, IC = - 0.15A - 0.9 -1.2 V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 50 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1 µs
Fall Time 0.1 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 50V, IE = 0 -1 µA
CB
= - 5V, IC = 0 -1 µA
EB
= - 1V, IC = - 1A
CE
= - 1V, IC = - 3A
V
CE
= - 4V, IC = - 1A 60 MHz
CE
= - 10V, f = 1MHz 170 pF
CB
= - 30V, IC = - 3A
CC
I
= -I
= 10Ω
L
= - 0.15A
B2
B1
R
70
30
240
0.1 µs
hFE Classification
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Typical Characteristics
KSA1244
-8
-6
-4
-2
[A], COLLECTOR CURRENT
C
I
-0
-0 -2 -4 -6 -8
VCE[V], COLLECTOR-EMITTER V O LT AGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -80mA
IB = -70mA
IB = -60mA
IB = -50mA
IB = -40mA
IB = -30mA
IB = -20mA
IB = -10mA
IB = 0mA
IC = 20 I
1000
VCE = -2V
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
-5
B
-4
-3
-2
-1
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0
VCE = -1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC MAX. (Pulse)
IC MAX. (DC)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Figure 4. Base-Emitter Saturation Voltage
1ms
10ms
DC
MAX.
CEO
V
32
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Loading...