Fairchild Semiconductor KSA1243 Datasheet
Power Amplifier Applications
• Complement to KSC3073
KSA1243
KSA1243
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
P
T
T
CBO
CEO
EBO
B
C
C
C
J
STG
Collector-Base Voltage - 30 V
Collector-Emitter Voltage - 30 V
Emitter-Base Voltage - 5 V
Base Current - 0.6 A
Collector Current - 3 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.8 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 30 V
Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 - 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 20V, IE = 0 - 1 µA
CB
= - 5V, IC = 0 - 1 µA
EB
= - 2V, IC = - 0.5A
CE
V
= - 2V, IC = - 2.5A
CE
= - 2V, IC = - 0.5A - 0.75 - 1 V
CE
= - 2V, IC = - 0.5A 100 MHz
CE
= - 10V, f = 1MHz 40 pF
CB
70
25
240
h
Classification
FE
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Typical Characteristics
KSA1243
-3.2
-2.4
IB = -40mA
IB = -35mA
IB = -30mA
IB = -25mA
IB = -20mA
-1.6
-0.8
[A], COLLECTOR CURRENT
C
I
-0.0
-0 -2 -4 -6 -8
IB = -15mA
IB = -10mA
IB = -5mA
IB = -3mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IB = 0
IC = 10 I
1000
100
VCE = -2V
10
, DC CURRENT GAIN
FE
h
1
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
B
-3.2
-2.4
-1.6
-0.8
[A], COLLECTOR CURRENT
C
I
-0.0
-0.4 -0.8 -1.2 -1.6
VCE = -2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Votlage Figure 4. Base-Emitter On Voltage
-10
IC MAX. (Pulse)
IC MAX. (DC)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
10ms
1ms
DC
MAX.
CEO
V
16
14
12
10
8
6
4
[W], POWER DISSIPATION
C
P
2
0
0 25 50 75 100 125 1 50 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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