Fairchild Semiconductor KSA1242 Datasheet
Medium Power Amplifier
Camera Flash Applications
•h
= 100~320 (V
FE
= 70 (Min.) (V
•h
FE
• Low Saturation Voltage: V
= -2V, IC = -0.5V)
CE
= -2V, IC = -4A)
CE
(sat) = -1V (Max.)
CE
KSA1242
KSA1242
1
I-PAK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage - 35 V
Collector-Emitter Voltage - 20 V
Emitter-Base Voltage - 8 V
Collector Current (DC) - 5 A
Collector Current (Pulse) - 8 A
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics T
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.1A - 1 V
V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 20 V
Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 - 8 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Collector Output Capacitance V
=25°C unless otherwise noted
C
=25°C unless otherwise noted
C
= - 35V, IE = 0 - 100 µA
CB
= - 8V, IC = 0 - 100 µA
EB
= - 2V, IC = - 0.5A
CE
V
= - 2V, IC = - 4A
CE
= - 2V, IC = - 4A - 1.5 V
CE
= - 2V, IC = - 0.5A 180 MHz
CE
= - 10V, f = 1MHz 50 pF
CB
100
70
320
hFE Classification
Classification O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
100 ~ 200 160 ~ 320
Typical Characteristics
KSA1242
-8
IB = -200mA
IB = -150mA
-6
IB = -100mA
IB = -70mA
1000
100
IB = -50mA
-4
IB = -30mA
IB = -20mA
-2
Ic[A], COLLECTOR CURRENT
-0
-0 -2 -4 -6 -8
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = -10mA
IB = 0
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characateristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.01 -0.1 -1 -10
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 40 I
B
-8
-6
-4
-2
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.4 -0.8 -1.2 -1.6
VBE[V], BASE-EMITTER VOLTAGE
VCE = -5V
Pulse Test
VCE = -2V
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-100
IC MAX. (Pulse)
-10
IC MAX. (DC)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-0.1 -1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
1ms
100ms
10ms
DC
MAX
CEO
V
16
14
12
10
8
6
4
[W], POWER DISSIPATION
C
P
2
0
0 50 100 150 200
Tc[oC], CASE TEMPERATURE
Rev. A1, June 2001
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