Fairchild Semiconductor KSA1241 Datasheet
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
• Complement to KSC3076
KSA1241
KSA1241
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
P
T
T
CBO
CEO
EBO
B
C
C
C
J
STG
Collector-Base Voltage - 55 V
Collector-Emitter Voltage - 50 V
Emitter-Base Voltage - 5 V
Base Current - 1 A
Collector Current - 2 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Ty p. Max. Units
BV
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 50 V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.05A - 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 1A, IB = - 0.05A - 1.2 V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1 µs
Fall Time 0.1 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 50V, IE = 0 - 1 µA
CB
= - 5V, IC = 0 - 1 µA
EB
= - 2V, IC = - 0.5A
CE
V
= - 2V, IC = - 1.5A
CE
= - 2V, IC = - 0.5A 100 MHz
CE
= - 10V, f = 1MHz 40 pF
CB
= - 30, IC = - 1A
CC
= - IB2 = - 0.05A
I
B1
= 30Ω
R
L
70
40
240
0.1 µs
hFE Classification
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Package Demensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
±0.20
I-PAK
2.30
0.50
KSA1241
±0.20
±0.10
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
2.30TYP
[2.30±0.20]
±0.20
0.70
±0.20
1.80
2.30TYP
[2.30±0.20]
±0.20
6.10
±0.30
9.30
0.50
±0.30
16.10
±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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