Fairchild Semiconductor KSA1220A, KSA1220 Datasheet
KSA1220/1220A
Audio Frequency Power Amplifier
High Frequency Power Amplifier
• Complement to KSC2690/KSC2690A
KSA1220/1220A
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector-Base Voltage : KSA1220
Collector-Emitter Voltage : KSA1220
Emitter-Base Voltage - 5 V
Collector Current (DC) - 1.2 A
*Collector Current (Pulse) - 2.5 A
Base Current - 0.3 A
Collector Dissipation (Ta=25°C) 1.2 W
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.2A - 0.4 - 0.7 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 1A, IB = - 0.2A - 1 - 1.3 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
: KSA1220A
: KSA1220A
TC=25°C unless otherwise noted
= - 120V, IE = 0 - 1 µA
CB
= - 3V, IC = 0 - 1 µA
EB
= - 5V, IC = - 5mA
CE
= - 5V, IC = - 0.3A
V
CE
= - 5V, IC = - 0.2A 175 MHz
CE
= - 10, IE = 0
CB
f = 1MHz
35
60
- 120
- 160
- 120
- 160
150
140 320
26
V
V
V
V
pF
hFE Classification
Classification R O Y
h
FE2
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSA1220/1220A
-1.0
= -9mA
B
I
= -10mA
B
I
-0.8
-0.6
-0.4
[A], COLLECTOR CURRENT
-0.2
C
I
-0.0
-0 -10 -20 -30 -40 -50 -60
IB = -7mA
= -8mA
IB = -6mA
B
I
IB = -5mA
IB = -4mA
IB = -3mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
IB = 0A
IB = -2mA
IC = 5 I
Pulse Test
IB = -1mA
B
1000
VCE = -5V
Pulse Test
100
10
, DC CURRENT GAIN
FE
h
1
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
1000
100
10
(PF), CAPACITANCE
ob
C
f=1.0MHz
I
=0
E
(sat), V
BE
V
-0.01
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1
-0.01 -0.1 -1
MHz), CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
10ms
DC(PW=50ms)
S/b Limited
KSA1220
KSA1220A
PW=100
㎲
1ms
Rev. A1, June 2001
VCE = -5V
Pulse Test
-10
IC MAX. (Pulse)
IC MAX. (DC)
-1
Dissipation
Limited
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
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