Fairchild Semiconductor KSA1201 Datasheet
KSA1201
Power Amplifier
• Collector-Emitter Voltage: V
=120MHz
•f
T
• Collector Power Dissipation P
• Complement to KSC2881
PNP Epitaxial Silicon Transistor
= -120V
CEO
=1~2W : Mounted on Ceramic Board
C
1
1. Base 2. Collector 3. Emitter
SOT-89
KSA1201
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Collector Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -800 mA
Base Current -160 mA
Collector Power Dissipation 500
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB=-50mA -1.0 V
V
CE
(on) Base-Emitter On Voltage VCE= -5V, IC= -500mA -1.0 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -120 V
Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V
Collector Cut-off Current VCB= -120V, IE=0 -100 nA
Emitter Cut-off Current VBE= -5V, IC=0 -100 nA
DC Current Gain VCE= -5V, IC= -100mA 80 240
Current Gain Bandwidth Product VCE= -5V, IC= -100mA 120 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 30 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
1,000
mW
mW
h
Classification
FE
Classification O Y
h
FE
80 ~ 160 120 ~ 240
Marking
SDX
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSA1201
-0.8
-0.6
IB =-10mA
IB =-7mA
IB =-5mA
IB =-4mA
-0.4
IB =-3mA
IB =-2mA
-0.2
[A], COLLECTOR CURRENT
C
I
IB =-1mA
IB =0
-0 -4 -8 -12 -16
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-1
-0.1
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
VCE = -5V
IC[mA], COLLECTOR CURRENT
-1.0
B
-0.8
-0.6
-0.4
VCE = -5V
(sat)[V], SATURATION VOLT A GE
CE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
-0.2
[A], COLLECTOR CURRENT
C
I
0 -0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10000
ICMAX(Pulse)
ICMAX(DC)
-1000
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
-0.1 -1 -10 -100 -1000
100ms
10ms
1ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
o
C
Ta=25
Single Pulse
MAX
CEO
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISSIPATION
C
P
0.2
Mounted on Ceramic Board (250mm
0 25 50 75 100 125 150 175 200
Ta[oC], AMBIENT TEMPERATURE
2
X0.8mm)
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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