Fairchild Semiconductor KSA1010 Datasheet
KSA1010
High Speed High Voltage Switching
• Industrial Use
• Complement to KSC2334
KSA1010
1
1.Base 2.Collector 3.Emitter
TO-220
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 7 V
Collector Current (DC) - 7 A
*Collector Current (Pulse) - 15 A
Base Current - 3.5 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (T
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
=25°C) 1.5 W
a
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
KSA1010
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - 0.5A, L = 1mH - 100 V
CEO
(sus)1 Collector-Emitter Sustaining Voltage
V
CEX
(sus)2 Collector-Emitter Sustaining Voltage IC = - 10A, IB1 = - 1A
V
CEX
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
h
FE3
(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.6 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V
V
BE
t
ON
t
STG
t
F
Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Turn On Tim e V
Storage Time 1.5 µs
Fall Time 0.5 µs
IC = - 5A, IB1 = - IB2 = - 0.5A
(off) = 5V, L = 180µH
V
BE
Clamped
= 0.5A, VBE(off) = 5V
I
B2
L = 180µH, Clamped
= - 100V, IE = 0 - 10 µA
CB
= - 100V, R
CE
T
= 125°C
C
= - 100V, VBE(off) = 1.5V - 10 µA
CE
= - 100V, VBE(off) = 1.5V
CE
= 125°C
T
C
= - 5V, IC= 0 - 10 uA
EB
= - 5V, IC = - 0.5A
CE
= - 5V, IC = - 3A
V
CE
V
= - 5V, IC = - 5A
CE
= - 50V, IC = - 5A,
CC
= - IB2 = - 0.5A
I
B1
= 10Ω
R
L
BE
= 51Ω
- 100 V
- 100 V
- 1 mA
- 1 mA
40
40
200
20
0.5 µs
hFE Classification
Classification R O Y
h
FE2
40 ~ 80 60 ~ 120 100 ~ 200
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
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