Fairchild Semiconductor KM4200IC8TR3 Datasheet

MSOP

Features

■

260MHz bandwidth

■

Fully specified at +2.7V and +5V supplies

■

Output voltage range: 0.036V to 4.953V;
Vs= +5; RL= 2kΩ

■

Input voltage range: -0.3V to +3.8V; Vs= +5

■

145V/µs slew rate

■

4.2mA supply current per amplifier

■

±55mA linear output current

■

±85mA short circuit current

■

Directly replaces AD8052 and AD8042 in single
supply applications

■

Small package options (SOIC and MSOP)

Applications

■

A/D driver

■

Active filters

■

CCD imaging systems

■

CD/DVD ROM

■

Coaxial cable drivers

■

High capacitive load driver

■

Portable/battery-powered applications

■

Twisted pair driver

■

Video driver

General Description

The KM4200 is a dual, low cost, voltage feedback
amplifier. This amplifier is designed to operate on
+2.7V, +5V, or ±2.5V supplies. The input voltage
range extends 300mV below the negative rail and

1.2V below the positive rail. The KM4100 (single) and
KM4101 (single with disable) are also available.

The KM4200 offers superior dynamic performance
with a 260MHz small signal bandwidth and 145V/µs
slew rate. The combination of low power, high out­put current drive, and rail-to-rail performance make
the KM4200 well suited for battery-powered com­munication/computing systems.

The combination of low cost and high performance
make the KM4200 suitable for high volume applica­tions in both consumer and industrial applications
such as wireless phones, scanners, and color copiers.

KM4200

Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier

www.fairchildsemi.com

REV. 1A February 2001

KM4200 Packages

SOIC

Output Swing

2.7

-In1

+In1

-V

-In1

+In1

-V

1

2

-

+

3

4

s

-

+

1

2

-

+

3

4

s

-

+

Out1

Out1

+V

8

s

Out2

7

-In2

6

5

+In2

+V

8

s

Out2

7

-In2

6

5

+In2

Output Voltage (0.5V/div)

0

Time (0.5µs/div)

Vs = +2.7V

R

= 2kΩ

L

G = -1

DATA SHEET KM4200

2 REV. 1A February 2001

PARAMETERS CONDITIONS TYP MIN & MAX UNITS NOTES

Case Temperature +25°C +25°C

Frequency Domain Response

-3dB bandwidth G = +1, Vo= 0.05V

pp

215 MHz 1

G = +2, Vo= 0.2V

pp

85 MHz

full power bandwidth G = +2, Vo= 2V

pp

36 MHz

gain bandwidth product 86 MHz

Time Domain Response

rise and fall time 0.2V step 3.7 ns 1
settling time to 0.1% 1V step 40 ns
overshoot 0.2V step, 9 %
slew rate 2.7V step, G = -1 130 V/µs

Distortion and Noise Response

2nd harmonic distortion 1Vpp, 5MHz 79 dBc 1
3rd harmonic distortion 1Vpp, 5MHz 82 dBc 1
THD 1Vpp, 5MHz 77 dB 1
input voltage noise >1MHz 16 nV/√Hz
input current noise >1MHz 1.3 pA/√Hz
crosstalk 10MHz 65 dB 1

DC Performance

input offset voltage -1.6 ±8 mV 2

average drift 10 µV/°C

input bias current 3 ±8 µA2

average drift 7 nA/°C
input offset current 0.1 ±1 µA2
power supply rejection ratio DC 57 52 dB 2
open loop gain 75 65 dB 2
quiescent current per amplifier 3.9 5 mA 2

Input Characteristics

input resistance 4.3 MΩ
input capacitance 1.8 pF
input common mode voltage range -0.3 to 1.5 V
common mode rejection ratio DC, Vcm= 0V to Vs- 1.5 87 72 dB 2

Output Characteristics

output voltage swing RL= 10kΩ to Vs/2 0.023 to 2.66 V

RL= 2kΩ to Vs/2 0.025 to 2.653 0.1 to 2.6 V 2
RL= 150Ω to Vs/2 0.065 to 2.55 0.3 to 2.325 V 2

linear output current ±55 mA

-40°C to +85°C ±50 mA
short circuit output current ±85 mA
power supply operating range 2.7 2.5 to 5.5 V

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.

NOTES:

1) Rf= 1kΩ was used used for optimal performance. (For G = +1, Rf= 0)

2) 100% tested at +25°C.

Absolute Maximum Ratings Package Thermal Resistance

supply voltage 0 to +6V

Package θ

JA

maximum junction temperature +175°C

8 lead SOIC 152°C/W

storage temperature range -65°C to +150°C

8 lead MSOP 206°C/W

lead temperature (10 sec) +300°C
operating temperature range (recommended) -40°C to +85°C
input voltage range +V

s

+0.5V; -Vs -0.5V

internal power dissipation see power derating curves

KM4200 Electrical Characteristics

(Vs= +2.7V, G = 2, RL= 2kΩ to Vs/2; unless noted)

KM4200 DATA SHEET

REV. 1A February 2001 3

Parameters Conditions TYP Min & Max UNITS NOTES

Case Temperature +25°C +25°C

Frequency Domain Response

-3dB bandwidth G = +1, Vo= 0.05V

pp

260 MHz 1

G = +2, Vo= 0.2V

pp

90 MHz

full power bandwidth G = +2, Vo= 2V

pp

40 MHz

gain bandwidth product 90 MHz

Time Domain Response

rise and fall time 0.2V step 3.6 ns 1
settling time to 0.1% 2V step 40 ns
overshoot 0.2V step, 7 %
slew rate 5V step, G = -1 145 V/µs

Distortion and Noise Response

2nd harmonic distortion 2Vpp, 5MHz 71 dBc 1
3rd harmonic distortion 2Vpp, 5MHz 78 dBc 1
THD 2Vpp, 5MHz 70 dB 1
input voltage noise >1MHz 16 nV/√Hz
input current noise >1MHz 1.3 pA/√Hz
crosstalk 10MHz 62 dB 1

DC Performance

input offset voltage 1.4 ±8 mV 2

average drift 10 µV/°C

input bias current 3 ±8 µA2

average drift 7 nA/°C
input offset current 0.1 ±0.8 µA2
power supply rejection ratio DC 57 52 dB 2
open loop gain 78 68 dB 2
quiescent current per amplifier 4.2 5.2 mA 2

Input Characteristics

input resistance 4.3 MΩ
input capacitance 1.8 pF
input common mode voltage range -0.3 to 3.8 V
common mode rejection ratio DC, Vcm= 0V to Vs- 1.5 87 72 dB 2

Output Characteristics

output voltage swing RL= 10kΩ to Vs/2 0.027 to 4.97 V

RL= 2kΩ to Vs/2 0.036 to 4.953 0.1 to 4.9 V 2
RL= 150Ω to Vs/2 0.12 to 4.8 0.3 to 4.625 V 2

linear output current ±55 mA

-40°C to +85°C ±50 mA
short circuit output current ±85 mA
power supply operating range 5 2.5 to 5.5 V

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.

NOTES:

1) Rf= 1kΩ was used used for optimal performance. (For G = +1, Rf= 0)

2) 100% tested at +25°C.

KM4200 Electrical Characteristics

(Vs= +5V, G = 2, RL= 2kΩ to Vs/2; unless noted)

KM4200 Performance Characteristics

(Vs= +5V, G = 2, Rf= 2kΩ, RL= 2kΩ to Vs/2; unless noted)

DATA SHEET KM4200

4 REV. 1A February 2001

Non-Inverting Freq. Response Vs = +5V

G = 1

Rf = 0

G = 2

Rf = 1kΩ

G = 10

Rf = 2kΩ

G = 5

R

= 2kΩ

f

Normalized Magnitude (2dB/div)

0.1

Non-Inverting Freq. Response Vs = +2.7

Normalized Magnitude (2dB/div)

0.1

1

10

Frequency (MHz)

G = 2

R

= 1kΩ

f

G = 10

Rf = 2kΩ

G = 5

Rf = 2kΩ

1

10

Frequency (MHz)

G = 1

Rf = 0

100

100

Inverting Frequency Response Vs = +5V

G = -1

R

= 2kΩ

f

G = -10

Rf = 2kΩ

G = -5

Rf = 2kΩ

G = -2

= 2kΩ

R

Normalized Magnitude (1dB/div)

0.1

Inverting Frequency Response Vs = +2.7V

Normalized Magnitude (1dB/div)

0.1

f

1

10

Frequency (MHz)

G = -1

Rf = 2kΩ

G = -10

= 2kΩ

R

f

G = -5

Rf = 2kΩ

G = -2

Rf = 2kΩ

1

10

Frequency (MHz)

100

100

Frequency Response vs. C

CL = 100pF

R

s

CL = 50pF

+

R

Magnitude (1dB/div)

1kΩ

0.1

s

­C

R

L

1kΩ

L

1

= 25Ω

= 33Ω

R

s

CL = 20pF

= 20Ω

R

s

CL = 10pF

10

R

= 0Ω

s

L

100

Frequency (MHz)

Frequency Response vs. Temperature

Magnitude (0.5dB/div)

1

10

100

Frequency (MHz)

Large Signal Frequency Response

Vo = 1V

Vo = 2V

Magnitude (1dB/div)

0.1

1

10

Frequency (MHz)

Input Voltage Noise

100

90
80
70
60
50
40
30
20

Voltage Noise (nV/√Hz)

10

0

1k

10k

Frequency (Hz)

pp

pp

100k

100

1M