Fairchild Semiconductor ISL9R860S3S, ISL9R860P2 Datasheet

ISL9R860P2, ISL9R860S2, ISL9R860S3S

8A, 600V Stealth™ Dio de

ISL9R860P2, ISL9R860S2, ISL9R860S3S

April 2002

General Description

The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ diodes optimized for low loss perform ance in
high frequency hard switched appli cations. The
Stealth™ family exhibits low reverse recovery current

) and exceptionally soft recovery u nde r t ypical

(I

RRM

operating conditions.
This device is intended for use as a free wheeling or

boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistor s. The so f t recover y
minimizes ringing, expanding the rang e of con di tions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.

Formerly developmental type TA49409.

and short ta phase

RRM

Features

• Soft Recovery. . . . . . . . . . . . . . . . . . . .tb / ta > 2.5

• Fast Recovery . . . . . . . . . . . . . . . . . . . . t

< 25ns

rr

• Operating Temperature . . . . . . . . . . . . . . . 175

• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

Package Symbol

JEDEC TO-263AB

N/C

ANODE

K

CATHODE
(FLANGE)

A

CATHODE
(FLANGE)

ANODE

CATHODE

CATHODE
(FLANGE)

JEDEC STYLE TO-262JEDEC TO-220AC

ANODE

CATHODE

o

C

Device Maximum Ratings T

Symbol Parameter Ratings Units

V

RRM

V

RWM

V

I

F(AV)

I

FRM

I

FSM

P

E

AVL

, T

T

J

T

T

PKG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

©2002 Fairchild Semiconductor Corporation

Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V

R

Average Rectified Forw ard Current (TC = 147oC) 8 A
Repetitive Peak Surge Current (20kHz Square Wave) 16 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
Power Dissipation 85 W

D

Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 175 °C

STG

Maximum Te m perature for Soldering

L

Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334

= 25°C unless otherwise noted

C

300
260

ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. C

°C
°C

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

R860P2 ISL9R860P2 TO-220AC - ­R860S2 ISL9R860S2 TO-262 - -

R860S3S ISL9R860S3S TO-263AB 24mm 800

ISL9R860P2, ISL9R860S2, ISL9R860S3S

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA

I

R

= 125°C--1.0mA

T

C

On State Characteristics

Instantaneous Forward Voltage IF = 8A TC = 25°C-2.02.4V

V

F

= 125°C-1.62.0V

T

C

Dynamic Characteristics

C

Junction Capacitance VR = 10V, IF = 0A - 30 - pF

J

Switching Characteristics

t

Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns

rr

t

Reverse Recovery Time IF = 8A,

rr

I

RRM

Q

Maximum Reverse Recovery Current - 3.2 - A
Reverse Recovery Charge - 50 - nC

RR

Reverse Recovery Time IF = 8A,

t

rr

S Softness Factor (t

I

RRM

Q

Maximum Reverse Recovery Current - 3.4 - A
Reverse Recovery Charge - 150 - nC

RR

Reverse Recovery Time IF = 8A,

t

rr

S Softness Factor (t

I

Q

dI

RRM

Maximum Reverse Recovery Current - 6.5 - A
Reverse Recovery Charge 195 - nC

RR

/dt Maximum di/dt during t

M

)-3.7-

b/ta

)-2.5-

b/ta

b

= 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns

I

F

-28-ns

/dt = 200A/µs,

dI

F

V

= 390V, TC = 25°C

R

-77-ns

/dt = 200A/µs,

dI

F

V

= 390V,

R

= 125°C

T

C

-53-ns

/dt = 600A/µs,

dI

F

V

= 390V,

R

= 125°C

T

C

- 500 - A/µs

Thermal Characteristics

R
R
R
R

©2002 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. C

Thermal Resistance Junction to Case - - 1.75 °C/W

θJC

Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W

θJA

Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W

θJA

Thermal Resistance Junction to Ambient TO-263 62 °C/W

θJA