Fairchild Semiconductor ISL9R3060P2, ISL9R3060G2 Datasheet
ISL9R3060G2, ISL9R3060P2
30A, 600V Stealth™ Diode
ISL9R3060G2, ISL9R3060P2
May 2002
General Description
The ISL9R3060G2 and ISL9R3060P2 are Stealth™ diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recover y c u rrent (I
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealt h™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49411
RM(REC)
) and exceptionally soft
RM(REC)
and short ta phase reduce loss
.
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
< 35ns
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
JEDEC TO-220AC
K
ANODE
CATHODE
A
CATHODE
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
ANODE
CATHODE
CATHODE
(FLANGE)
o
C
Device Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
Repetitive Peak Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forw ard Current (TC = 125oC) 30 A
Repetitive Peak Surge Current (20kHz Square Wave) 70 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A
Power Dissipation 200 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
ISL9R3060G2, ISL9R3060P2 Rev. C
°C
°C
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R3060G2 ISL9R3060G2 TO-247 - R3060P2 ISL9R3060P2 TO-220AC - -
ISL9R3060G2, ISL9R3060P2
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
= 125°C--1.0mA
T
C
On State Characteristics
Instantaneous Forward Voltage IF = 30A TC = 25°C-2.12.4V
V
F
= 125°C-1.72.1V
T
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 120 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns
rr
I
= 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns
F
Reverse Recovery Time IF = 30A,
t
rr
I
RM(REC)
Q
Maximum Reverse Recovery Current - 2.9 - A
Reverse Recovered Charge - 55 - nC
RR
Reverse Recovery Time IF = 30A,
t
rr
S Softness Factor (t
I
RM(REC)
Q
Maximum Reverse Recovery Current - 6 - A
Reverse Recovered Charge - 450 - nC
RR
t
Reverse Recovery Time IF = 30A,
rr
S Softness Factor (t
I
RM(REC)
Q
dI
Maximum Reverse Recovery Current - 21 - A
Reverse Recovered Charge 730 - nC
RR
/dt Maximum di/dt during t
M
/dt = 200A/µs,
dI
F
= 390V, TC = 25°C
V
R
/dt = 200A/µs,
dI
)-1.9-
b/ta
) - 1.25 -
b/ta
b
F
= 390V,
V
R
T
= 125°C
C
/dt = 1000A/µs,
dI
F
= 390V,
V
R
T
= 125°C
C
-36-ns
- 110 - ns
-60-ns
- 800 - A/µs
Thermal Characteristics
R
R
R
1560©2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C
Thermal Resistance Junction to Case - - 1.0 °C/W
θJC
Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
θJA
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
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