Fairchild Semiconductor ISL9R18120S3S, ISL9R18120P2, ISL9R18120G2 Datasheet

ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S

18A, 1200V Stealth™ Diode

ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S

May 2002

General Description

The ISL9R18120G2, I SL9R181 20P2 a nd ISL9R18 120S3S are
Stealth™ diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (I
exceptionall y soft recovery under typical oper ating conditions.

This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.

Formerly developmental type TA49414

and short ta phase reduce loss

RM(REC)

RM(REC)

.

) and

Features

• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 5.0

• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t

< 45ns

rr

• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150

• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

Package Symbol

2 LEAD TO-247

ANODE

CATHODE

JEDEC TO-220AC

ANODE

CATHODE

JEDEC TO-263AB

N / C

CATHODE

(FLANGE)

K

o

C

CATHODE

(BOTTOM SIDE

METAL)

Device Maximum Ratings T

CATHODE

(FLANGE)

= 25°C unless otherwise noted

C

ANODE

Symbol Parameter Ratings Units

V

RRM

V

RWM

V

I

F(AV)

I

FRM

I

FSM

P

E

AVL

, T

T

J

T

T

PKG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

©2002 Fairchild Semiconductor Corporation

Repetitive Peak Reverse Voltage 1200 V
Working Peak Reverse Voltage 1200 V
DC Blocking Voltage 1200 V

R

Average Rectified Forw ard Current (TC = 92oC) 18 A
Repetitive Peak Surge Current (20kHz Square Wave) 36 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A
Power Dissipation 125 W

D

Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 150 °C

STG

Maximum Temperature for Soldering

L

Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528

ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A

300
260

A

°C
°C

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

R18120G2 ISL9R18120G2 TO-247 N/A 30

R18120P2 ISL9R18120P2 TO-220AC N/A 50

R18120S3S ISL9R18120S3S TO-263AB 24mm 800

ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

Instantaneous Reverse Current VR = 1200V TC = 25°C - - 100 µA

I

R

= 125°C--1.0mA

T

C

On State Characteristics

Instantaneous Forward Voltage IF = 18A TC = 25°C-2.73.3V

V

F

= 125°C-2.53.1V

T

C

Dynamic Characteristics

C

Junction Capacitance VR = 10V, IF = 0A - 69 - pF

J

Switching Characteristics

t

Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 38 45 ns

rr

t

Reverse Recovery Time IF = 18A,

rr

I

RM(REC)

Q

Maximum Reverse Recovery Current - 6.5 - A
Reverse Recovered Charge - 950 - nC

RR

Reverse Recovery Time IF = 18A,

t

rr

S Softness Factor (t

I

RM(REC)

Q

Maximum Reverse Recovery Current - 8.0 - A
Reverse Recovered Charge - 2.0 - µC

RR

Reverse Recovery Time IF = 18A,

t

rr

S Softness Factor (t

I

RM(REC)

Q

dI

Maximum Reverse Recovery Current - 22 - A
Reverse Recovered Charge - 2.1 - µC

RR

/dt Maximum di/dt during t

M

)-7.0--

b/ta

)-5.2--

b/ta

b

= 18A, dIF/dt = 100A/µs, VR = 30V - 60 70 ns

I

F

- 300 - ns

/dt = 200A/µs,

dI

F

V

= 780V, TC = 25°C

R

- 400 - ns

/dt = 200A/µs,

dI

F

V

= 780V,

R

= 125°C

T

C

- 235 - ns

/dt = 1000A/µs,

dI

F

V

= 780V,

R

= 125°C

T

C

- 370 - A/µs

Thermal Characteristics

R
R
R

©2002 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A

Thermal Resistance Junction to Case TO-247, TO-220, TO-263 - - 1.0 °C/W

θJC

Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W

θJA

Thermal Resistance Junction to Ambient TO-220, TO-263 - - 62 °C/W

θJA