Fairchild Semiconductor ISL9R1560S3S, ISL9R1560P2 Datasheet
November 2002
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
15A, 600V Stealth™ Diode
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
General Description
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and
ISL9R1560S3S are Stealth™ dio des optimized for lo w loss
performance in high freque ncy hard s witched applicat ions. The
Stealth™ family exhibits low reverse recovery current
(I
operating co nditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimi zes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealt h™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49410
) and exceptionally soft recovery under typical
RM(REC)
and short ta phase reduce loss
RM(REC)
.
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
< 30ns
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
JEDEC TO-220AC
K
ANODE
CATHODE
A
CATHODE
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
ANODE
CATHODE
CATHODE
(FLANGE)
o
C
JEDEC STYLE TO-262
ANODE
CATHODE
CATHODE
(FLANGE)
Device Maximum Ratings T
ANODE
= 25°C unless otherwise noted
C
JEDEC TO-263AB
CATHODE
(FLANGE)
N/C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
©2002 Fairchild Semiconductor Corporation
Repetitive Peak Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forw ard Current (TC = 145oC) 15 A
Repetitive Peak Surge Current (20kHz Square Wave) 30 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
Symbol Parameter Ratings Units
P
E
AVL
T
, T
J
T
T
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Power Dissipation 150 W
D
Avalanche Energy (1A, 40mH) 20 m J
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R1560G2 ISL9R1560G2 TO-247 N/A 30
R1560P2 ISL9R1560P2 TO-220AC N/A 50
R1560S2 ISL9R1560S2 TO-262 N/A 50
R1560S3S ISL9R1560S3S TO-263AB 24mm 800
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
°C
°C
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
= 125°C--1.0mA
T
C
On State Characteristics
V
Instantaneous Forward Voltage IF = 15A TC = 25°C-1.82.2V
F
T
= 125°C - 1.65 2.0 V
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 62 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 30 ns
rr
= 15A, dIF/dt = 100A/µs, VR = 30V - 35 40 ns
I
F
Reverse Recovery Time IF = 15A,
t
rr
I
RM(REC)
Q
Maximum Reverse Recovery Current - 3.5 - A
Reverse Recovered Charge - 57 - nC
RR
Reverse Recovery Time IF = 15A,
t
rr
S Softness Factor (t
I
RM(REC)
Q
Maximum Reverse Recovery Current - 5.0 - A
Reverse Recovered Charge - 275 - nC
RR
Reverse Recovery Time IF = 15A,
t
rr
S Softness Factor (t
I
RM(REC)
Q
dI
Maximum Reverse Recovery Current - 13.5 - A
Reverse Recovered Charge - 390 - nC
RR
/dt Maximum di/dt during t
M
/dt = 200A/µs,
dI
F
V
= 390V, TC = 25°C
R
/dt = 200A/µs,
dI
)-2.0-
b/ta
) - 1.36 -
b/ta
b
F
V
= 390V,
R
= 125°C
T
C
/dt = 800A/µs,
dI
F
V
= 390V,
R
= 125°C
T
C
- 29.4 - ns
-90-ns
-52-ns
- 800 - A/µs
Thermal Characteristics
R
R
R
R
R
©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
Thermal Resistance Junction to Case - - 1.0 °C/W
θJC
Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
θJA
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W
θJA
Thermal Resistance Junction to Ambient TO-263 - - 62 °C/W
θJA
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