Fairchild Semiconductor ISL9N327AD3ST Datasheet

February 2002

ISL9N327AD3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

ISL9N327AD3ST

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching
technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN (FLANGE)

GATE

SOURCE

•r

•r

•Q

•Q

•C

= 0.023Ω (Typ), VGS = 10V

DS(ON)

= 0.033Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 8.7nC, VGS = 5V

g

(Typ) =3.2nC

gd

(Typ) =910pF

ISS

D

G

S

TO-252

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 17 A

C

= 25oC, VGS = 10V, R

C

Pulsed Figure 4
Power dissipation

Derate above
Operating and Storage Temperature -55 to 175

TA=25°C unless otherwise noted

= 52oC/W) 7 A

θJA

20 A

50

0.33

W/

W

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case , TO-252 3
Thermal Resistance Junction to Ambient , TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N327AD ISL9N327AD3ST TO-252AA 330mm 16mm 2500 units

©2002 Fairchild Semiconductor Corporation

o

C/W

o

C/W

o

C/W

Rev. B, February 2002

ISL9N327AD3ST

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

- - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 20A, VGS = 10V - 0.023 0.027

Drain to Source On Resistance

D

I

= 17A, VGS = 4.5V - 0.033 0.040

D

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 200 - pF
Reverse Transfer Capacitance - 80 - pF
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 8.7 13 nC
Threshold Gate Charge VGS = 0V to 1V - 1.0 1.5 nC
Gate to Source Gate Charge - 3.8 - nC
Gate to Drain “Miller” Charge - 3.2 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 12 - ns
Rise Time - 46 - ns
Turn-Off Delay Time - 28 - ns
Fall Time - 28 - ns
Turn-Off Time - - 84 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 7A

DD

V

= 4.5V, RGS = 18Ω

GS

V

DD

I

= 17A

D

= 1.0mA

I

g

= 15V

- 910 - pF

-1726nC

- - 87 ns

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 7 - ns
Rise Time - 22 - ns
Turn-Off Delay Time - 49 - ns
Fall Time - 27 - ns
Turn-Off Time - - 114 ns

(VGS = 10V)

= 15V, ID = 7A

V

DD

= 10V, RGS = 18Ω

V

GS

- - 44 ns

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 2.7A, L= 3mH 180 - - µs

Drain-Source Diode Characteristics

I

= 17A - - 1.25 V

V

SD

t

rr

Q

RR

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 17A, dISD/dt = 100A/µs- - 27 ns

Reverse Recovered Charge ISD = 17A, dISD/dt = 100A/µs- - 21 nC

SD

= 9A - - 1.0 V

I

SD

Typical Characteristic

ISL9N327AD3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

25

20

V

= 10V

GS

15

V

= 4.5V

GS

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

x R

0

2

2

+ T

θJC

C

1

10

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

Figure 3. Normalized Maximum Transient Thermal Impedance

400

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

100

, PEAK CURRENT (A)

DM

I

10

10

VGS = 10V

-5

10

VGS = 5V

-4

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

ISL9N327AD3ST

Typical Characteristic

30

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

25

V

= 15V

DD

20

15

10

, DRAIN CURRENT (A)

D

I

TJ = 25oC

5

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

TJ = 175oC

VGS, GATE T O SOURCE VOLTAGE (V)

(Continued)

TJ = -55oC

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Characteristics

50

50

ID = 20A

40

ID = 1A

, DRAIN TO SOURCE

30

ON RESISTANCE (mΩ)

DS(ON)

r

20

246810

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

30

VGS = 10V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 1.5 2.0

2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

TC = 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

VGS = 4.5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 10V, ID =20A

VGS = 3.5V

VGS = 3V

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.4

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2
ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temp er atu re