Fairchild Semiconductor ISL9N322AD3ST Datasheet
±
θ
θ
θ
θ
ISL9N322AD3ST
January 2002
PWM Optimized
ISL9N322AD3ST
N-Channel Logic Level UltraFET® Trench MOSFET
30V, 20A, 0.022 Ω
General Description
This device employs a new advanced trench MOSFET
Features
• Fast switching
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
DRAIN (FLANGE)
GATE
SOURCE
•r
•r
•Q
•Q
•C
= 0.018 Ω (Typ), V
DS(ON)
= 0.028 Ω (Typ), V
DS(ON)
(Typ) = 9nC, V
g
(Typ) =3nC
gd
(Typ) =970pF
ISS
G
= 10V
GS
= 4.5V
GS
= 5V
GS
D
S
TO-252
MOSFET Maximum Ratings
T
=25°C unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 30 V
Gate to Source Voltage
Drain Current
Continuous (T
I
D
Continuous (T
Continuous (T
= 25
C
= 100
C
= 25
C
o
C, V
o
C, V
= 10V)
GS
o
C, V
= 4.5V) 20 A
GS
= 10V, R
GS
o
=52
C) 8 A
JA
Pulsed Figure 4 A
P
D
T
, T
J
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature -55 to 175
20 V
20 A
50
0.33
W/
W
o
C
o
C
Thermal Characteristics
R
JC
R
JA
R
JA
Thermal Resistance Junction to Case TO-252 3
Thermal Resistance Junction to Ambient TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area 52
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
N322AD ISL9N322AD3ST TO-252AA 330mm 16mm 2500 units
©2002 Fairchild Semiconductor Corporation
o
C/W
o
C/W
o
C/W
Rev.B, January 2002
µ
±
Ω
T
Electrical Characteristics
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
I
DSS
I
GSS
VDSS
Drain to Source Breakdown Voltage I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current V
= 250 µ A, V
D
V
= 25V - - 1
DS
V
= 0V T
GS
= ± 20V - -
GS
= 0V 30 - - V
GS
o
= 150
C
- - 250
100 nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage V
Drain to Source On Resistance
= V
GS
I
= 20A, V
D
I
= 18A, V
D
, I
= 250 µ A1-3V
DS
D
= 10V - 0.018 0.022
GS
= 4.5V - 0.028 0.033
GS
Dynamic Characteristics
C
C
C
Q
Q
Q
Q
Q
ISS
OSS
RSS
g(TOT)
g(5)
g(TH)
gs
gd
Input Capacitance
Output Capacitance - 205 - pF
Reverse Transfer Capacitance - 80 - pF
Total Gate Charge at 10V V
Total Gate Charge at 5V V
Threshold Gate Charge V
Gate to Source Gate Charge - 3.5 - nC
V
= 15V, V
DS
f = 1MHz
= 0V to 10V
GS
= 0V to 5V - 9 14 nC
GS
= 0V to 1V - 1.0 1.5 nC
GS
GS
= 0V,
V
DD
I
= 18A
D
I
g
= 15V
= 1.0mA
- 970 - pF
-1827nC
Gate to Drain “Miller” Charge - 3.0 - nC
ISL9N322AD3ST
A
(V
(V
= 4.5V)
GS
= 10V)
GS
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 47 - ns
Turn-Off Delay Time - 24 - ns
Fall Time - 28 - ns
Turn-Off Time - - 78 ns
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 7 - ns
Rise Time - 29 - ns
Turn-Off Delay Time - 45 - ns
Fall Time - 27 - ns
Turn-Off Time - - 108 ns
Unclamped Inductive Switching
t
av
Avalanche Time I
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time I
Reverse Recovered Charge I
- - 87 ns
V
DD
V
GS
= 15V, I
= 4.5V, R
= 8A
D
GS
= 16 Ω
- - 54 ns
V
= 15V, I
DD
V
= 10V, R
GS
= 2.7A, L = 3mH 180 - -
D
I
= 18A - - 1.25 V
SD
I
= 9A - - 1.0 V
SD
= 18A, dI
SD
= 18A, dI
SD
= 8A
D
= 16 Ω
GS
/dt = 100A/ µ s- - 25 ns
SD
/dt = 100A/ µ s- - 17 nC
SD
µ
s
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002
ISL9N322AD3ST
Typical Characteristic
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
125
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
-4
10
10
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
150
25 50 75 100 125 150 175
Figure 2. Maximum Continuous Drain Current vs
-3
t, RECTANGULAR PULSE DURATION (s)
-2
10
V
= 10V
GS
V
= 4.5V
GS
TC, CASE TEMPERATURE (oC)
Case Temperature
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-1
10
θJC
10
0
x R
t
1
t
2
2
+ T
θJC
C
1
10
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
VGS = 10V
VGS = 5V
-4
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
10
C
150
0
1
10
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002
Typical Characteristic (Continued)
ISL9N322AD3ST
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 15V
DD
40
30
20
, DRAIN CURRENT (A)
D
I
TJ = 25oC
10
0
12345
TJ = 175oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55oC
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0 0.5 1.0 1.5 2.0
VGS = 10V
PULSE DURATION = 80µs
TC = 25oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
DUTY CYCLE = 0.5% MAX
Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics
40
ID = 10A
30
, DRAIN TO SOURCE
20
ON RESISTANCE (mΩ)
DS(ON)
r
10
246810
ID = 20A
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
ON RESISTANCE
1.0
NORMALIZED DRAIN TO SOURCE
0.5
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
VGS = 4.5V
VGS = 3.5V
VGS = 3V
VGS = 10V, ID =20A
Figure 7. Drain To Source On Resistance vs Gate
Voltage And Drain Current
1.2
1.0
0.8
NORMALIZED GATE
0.6
THRESHOLD VOLTAGE
0.4
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
VGS = VDS, ID = 250µA
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002
Figure 8. Normalized Drain To Source On
Resistance vs Junction Temperatrue
1.2
ID = 250µA
1.1
1.0
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
0.9
-80 -40 0 40 80 120 160 200
T
, JUNCTION TEMPERATURE (oC)
J
Figure 10. Normalized Drain To Source
Breakdown Voltage vs Junction Temperature
Loading...