Fairchild Semiconductor ISL9N312AS3ST, ISL9N312AP3 Datasheet

±

θ

ISL9N312AP3/ISL9N312AS3ST

January 2002

ISL9N312AP3/ISL9N312AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN

(FLANGE)

GATE

SOURCE

•r

•Q

•C

DRAIN

(FLANGE)

= 0.010 Ω (Typ), V

DS(ON)

= 0.017 Ω (Typ), V

DS(ON)

(Typ) = 13nC, V

g

(Typ) = 4.5nC

gd

(Typ) = 1450pF

ISS

SOURCE

DRAIN

GATE

GS

= 5V

GS

= 10V

= 4.5V

D

G

S

TO-263AB TO-220AB

MOSFET Maximum Ratings

T

= 25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 30 V

Gate to Source Voltage

Drain Current

Continuous (T

I

D

Continuous (T

= 25

C

= 100

C

= 25

C

o

C, V

o

C, V

= 10V)

GS

o

C, V

= 4.5V) 32 A

GS

= 10V, R

GS

o

= 43

C/W) 12 A

JA

Pulsed Figure 4 A

P

D

T

, T

J

STG

Power dissipation Derate above 25

o

C

Operating and Storage Temperature -55 to 175

20 V

58 A

75

0.5

W/

W

o

C

o

C

Thermal Characteristics

R

JC

R

JA

R

JA

Thermal Resistance Junction to Case TO-220, TO-263 2

Thermal Resistance Junction to Ambient TO-220, TO-263 62

Thermal Resistance Junction to Ambient TO-263, 1in

2

copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N312AS ISL9N312AS3ST TO-263AB 330mm 24mm 800 units

N312AP ISL9N312AP3 TO-220AB Tube N/A 50

o

C/W

o

C/W

o

C/W

Rev. B, January 2002

µ

±

Ω

T

Electrical Characteristics

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage I

Zero Gate Voltage Drain Current

Gate to Source Leakage Current V

= 250 µ A, V

D

V

= 25V - - 1

DS

V

= 0V T

GS

= ± 20V - -

GS

= 0V 30 - - V

GS

o

= 150

C

- - 250

100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage V

Drain to Source On Resistance

= V

GS

I

= 58A, V

D

I

= 32A, V

D

, I

= 250 µ A1-3V

DS

D

= 10V - 0.010 0.012

GS

= 4.5V - 0.017 0.020

GS

Dynamic Characteristics

C

Q

ISS

OSS

RSS

g(TOT)

g(5)

g(TH)

gs

gd

Input Capacitance

Output Capacitance - 300 - pF

Reverse Transfer Capacitance - 120 - pF

Total Gate Charge at 10V V

Total Gate Charge at 5V V

Threshold Gate Charge V

Gate to Source Gate Charge - 4.3 - nC

V

= 15V, V

DS

f = 1MHz

= 0V to 10V

GS

= 0V to 5V - 13 20 nC

GS

= 0V to 1V - 1.5 2.3 nC

GS

= 0V,

V

DD

I

D

I

g

= 15V

= 32A

= 1.0mA

- 1450 - pF

25 38 nC

Gate to Drain “Miller” Charge - 4.5 - nC

µ

ISL9N312AP3/ISL9N312AS3ST

A

(V

= 4.5V)

GS

= 10V)

GS

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 15 - ns

Rise Time - 60 - ns

Turn-Off Delay Time - 25 - ns

Fall Time - 30 - ns

Turn-Off Time - - 83 ns

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 8 - ns

Rise Time - 30 - ns

Turn-Off Delay Time - 45 - ns

Fall Time - 30 - ns

Turn-Off Time - - 115 ns

Unclamped Inductive Switching

t

AV

Avalanche Time I

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage

Reverse Recovery Time I

Reverse Recovered Charge I

- - 115 ns

V

DD

V

GS

= 15V, I = 4.5V, R

= 12A

D

GS

= 11 Ω

- - 57 ns

V

= 15V, I

DD

V

= 10V, R

GS

= 2.9A, L = 3.0mH 195 - -

D

I

= 32A - - 1.25 V

SD

I

= 15A - - 1.0 V

SD

= 32A, dI

SD

= 32A, dI

SD

= 12A

D

= 11 Ω

GS

/dt = 100A/ µ s- - 20 ns

SD

/dt = 100A/ µ s- - 7 nC

SD

s

ISL9N312AP3/ISL9N312AS3ST

Typical Characteristic

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

SINGLE PULSE

10

60

40

20

, DRAIN CURRENT (A)

D

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS = 10V

VGS = 4.5V

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

θJC

10

x R

0

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

VGS = 10V

10

VGS = 5V

-5

, PEAK CURRENT (A)

DM

I

100

50

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25 CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

175 - T

150

0

10

C

1

10

Figure 4. Peak Current Capability

Typical Characteristic (Continued)

ISL9N312AP3/ISL9N312AS3ST

120

PULSE DURATION = 80ms

DUTY CYCLE = 0.5% MAX V

= 15V

DD

80

40

, DRAIN CURRENT (A)

D

I

0

12345

TJ = 175oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

6

120

PULSE DURATION = 80µµµµs DUTY CYCLE = 0.5% MAX

TC = 25oC

80

40

, DRAIN CURRENT (A)

D

I

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics

30

25

)

ΩΩ

20

15

, DRAIN TO SOURCE

ON RESISTANCE (mΩΩ

10

DS(ON)

r

5

246810

ID = 12A

, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µµµµs DUTY CYCLE = 0.5% MAX

ID = 58A

ID = 32A

2.0

PULSE DURATION = 80µµµµs DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V

VGS = 4.5V

VGS = 4V

VGS = 3V

VGS = 10V, ID = 58A

Figure 7. Drain to Source On Resistance vs Gate

Voltage and Drain Current

1.2

VGS = VDS, ID = 250µµµµA

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

Figure 9. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2

ID = 250µµµµA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200

, JUNCTION TEMPERATURE (oC)

T

J

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Fairchild Semiconductor ISL9N312AS3ST, ISL9N312AP3 Datasheet

Specifications and Main Features

Frequently Asked Questions

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