Fairchild Semiconductor ISL9N312AD3ST, ISL9N312AD3 Datasheet

June 2002

ISL9N312AD3 / ISL9N312AD3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

ISL9N312AD3 / ISL9N312AD3ST

General Description

This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

Applications

• DC/DC converters

Features

• Fast switching

•r

•r

•Q

•Q

•C

= 0.010Ω (Typ), VGS = 10V

DS(ON)

= 0.017Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 13nC, VGS = 5V

g

(Typ) = 4.5nC

gd

(Typ) = 1450pF

ISS

D

D

G

S

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

T

, T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed Figure 4 A
Power dissipation

Derate above 25
Operating and Storage Temperature -55 to 175

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 32 A

C

= 25oC, VGS = 10V, R

C

o

C

G DS

= 25°C unless otherwise noted

A

= 52oC/W) 11 A

θJA

I-PAK

(TO-251AA)

G

S

50 A

75

0.5

W

W/oC

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-251, TO-252 2
Thermal Resistance Junction to Ambient TO-251, TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N312AD ISL9N312AD3ST TO-252AA 330mm 16mm 2500 units
N312AD ISL9N312AD3 TO-251AA Tube NA 50 units

©2002 Fairchild Semiconductor Corporation

ISL9N312AD3 / ISL9N312AD3ST Rev C

o

C/W

o

C/W

o

C/W

ISL9N312AD3 / ISL9N312AD3ST

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

- - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 50A, VGS = 10V - 0.010 0.012

Drain to Source On Resistance

D

= 32A, VGS = 4.5V - 0.017 0.020

I

D

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(5)
g(TH)
gs
gd

Input Capacitance
Output Capacitance - 300 - pF
Reverse Transfer Capacitance - 120 - pF
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 13 20 nC
Threshold Gate Charge VGS = 0V to 1V - 1.5 2.3 nC
Gate to Source Gate Charge - 4.3 - nC
Gate to Drain “Miller” Charge - 4.5 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 60 - ns
Turn-Off Delay Time - 25 - ns
Fall Ti me - 30 - ns
Turn-Off Time - - 83 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 11A

DD

V

= 4.5V, RGS = 11Ω

GS

V

DD

I

= 32A

D

= 1.0mA

I

g

= 15V

- 1450 - pF

-2538nC

- - 115 ns

µA

Ω

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 30 - ns
Turn-Off Delay Time - 45 - ns
Fall Ti me - 30 - ns
Turn-Off Time - - 115 ns

GS

= 10V)

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 2.9A, L = 3.0mH 195 - - µs

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 32A, dISD/dt = 100A/µs- - 20 ns

Reverse Recovered Charge ISD = 32A, dISD/dt = 100A/µs- - 7 nC

- - 57 ns

= 15V, ID = 11A

V

DD

= 10V, RGS = 11Ω

V

GS

I

= 32A - - 1.25 V

SD

= 15A - - 1.0 V

I

SD

ISL9N312AD3 / ISL9N312AD3ST Rev C©2002 Fairchild Semiconductor Corporation

ISL9N312AD3 / ISL9N312AD3ST

Typical Characteristic T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

SINGLE PULSE

10

60

40

20

, DRAIN CURRENT (A)

D

I

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Contin uous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS = 10V

VGS = 4.5V

TC, CASE TEMPERATURE (oC)

Case Temperature

P

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

10

DM

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

, PEAK CURRENT (A)
I

DM

1000

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

30

-5

10

Figure 3. Normalized Maximum Transient Thermal Impedance

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25
CURRENT AS FOLLOWS:

-1

I = I

25

C DERATE PEAK

175 - T

150

0

10

ISL9N312AD3 / ISL9N312AD3ST Rev C©2002 Fairchild Semiconductor Corporation

C

1

10

ISL9N312AD3 / ISL9N312AD3ST

Typical Characteristic (Continued) T

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

75

50

, DRAIN CURRENT (A)

25

D

I

0

123456

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Character istics

25

ID = 14A

20

15

ID = 32A
ID = 50A

TJ = -55oC

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TJ = 175oC

TJ = 25oC

= 25°C unless otherwise noted

C

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 25oC

T

C

75

50

, DRAIN CURRENT (A)

25

D

I

0

0 0.5 1.0 1.5 2.0

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

V

= 10V

GS

= 4.5V

V

GS

= 4V

V

GS

VGS = 3V

VDS, DRAIN TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE

10

ON RESISTANCE (mΩ)

DS(ON)

r

5

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 0 40 80 120 160 200-40

TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

-80

-40

-40

TJ, JUNCTION TEMPERATURE (oC)

0

40 80

VGS = 10V, ID = 50A

120 160 200

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2
ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200

T

, JUNCTION TEMPERATURE (oC)

J

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

ISL9N312AD3 / ISL9N312AD3ST Rev C©2002 Fairchild Semiconductor Corporation