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ISL9N310AS3ST
Datasheet
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Fairchild Semiconductor ISL9N310AS3ST, ISL9N310AP3 Datasheet

±
θ
θ
θ
θ
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
January 2002
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
Features
• Fast switching technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Applications
• DC/DC converters
DRAIN
(FLANGE)
GATE
SOURCE
TO-263AB TO-220AB
MOSFET Maximum Ratings
DRAIN
(FLANGE)
TO-262AA
T
= 25°C unless otherwise noted
A
•r
•r
•Q
•Q
•C
SOURCE
DRAIN
= 0.008 Ω (Typ), V
DS(ON)
= 0.0115 Ω (Typ), V
DS(ON)
(Typ) = 17nC, V
g
(Typ) = 5.4nC
gd
(Typ) = 1800pF
ISS
GATE
GS
= 5V
GS
SOURCE
DRAIN
(FLANGE)
= 10V
= 4.5V
GS
DRAIN
GATE
G
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 30 V
Gate to Source Voltage
20 V
Drain Current
Continuous (T
I
D
Continuous (T
Continuous (T
= 25
C
= 100
C
= 25
C
o
C, V
o
C, V
= 10V)
GS
o
C, V
= 4.5V) 36 A
GS
= 10V, R
GS
o
= 43
C/W) 13.5 A
JA
62 A
Pulsed Figure 4 A
P
D
T
, T
J
STG
Power dissipation Derate above 25
o
C
Operating and Storage Temperature -55 to 175
70
0.47
D
S
W
o
W/
C
o
C
Thermal Characteristics
R
JC
R
JA
R
JA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263 2.14
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 62
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area 43
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
N310AS ISL9N310AS3ST TO-263AB 330mm 24mm 800 units
N310AS ISL9N310AS3 TO-262AA Tube N/A 50
N310AP ISL9N310AP3 TO-220AB Tube N/A 50
©2002 Fairchild Semiconductor Corporation
o
C/W
o
C/W
o
C/W
Rev. B, January 2002
µ
±
Ω
T
Electrical Characteristics
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
I
DSS
I
GSS
VDSS
Drain to Source Breakdown Voltage I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current V
= 250 µ A, V
D
V
= 25V - - 1
DS
V
= 0V T
GS
= ± 20V - -
GS
= 0V 30 - - V
GS
o
= 150
C
- - 250
100 nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage V
Drain to Source On Resistance
= V
GS
I
= 62A, V
D
I
= 36A, V
D
, I
= 250 µ A1-3V
DS
D
= 10V - 0.008 0.010
GS
= 4.5V - 0.0115 0.015
GS
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 390 - pF
Reverse Transfer Capacitance - 190 - pF
Total Gate Charge at 10V V
Total Gate Charge at 5V V
Threshold Gate Charge V
Gate to Source Gate Charge - 3.7 - nC
V
= 15V, V
DS
f = 1MHz
= 0V to 10V
GS
= 0V to 5V - 17 26 nC
GS
= 0V to 1V - 1.9 2.9 nC
GS
GS
= 0V,
V
DD
I
D
I
g
= 15V
= 36A
= 1.0mA
- 1800 - pF
32 48 nC
Gate to Drain “Miller” Charge - 5.4 - nC
µ
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
A
(V
(V
= 4.5V)
GS
= 10V)
GS
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 52 - ns
Turn-Off Delay Time - 39 - ns
Fall Time - 36 - ns
Turn-Off Time - - 112 ns
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 7 - ns
Rise Time - 38 - ns
Turn-Off Delay Time - 78 - ns
Fall Time - 44 - ns
Turn-Off Time - - 183 ns
Unclamped Inductive Switching
t
AV
Avalanche Time I
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time I
Reverse Recovered Charge I
- - 95 ns
V
DD
V
GS
= 15V, I = 4.5V, R
= 13.5A
D
= 9.1 Ω
GS
- - 68 ns
V
= 15V, I
DD
V
= 10V, R
GS
= 3.0A, L = 3.0mH 200 - -
D
I
= 36A - - 1.25 V
SD
I
= 20A - - 1.0 V
SD
= 36A, dI
SD
= 36A, dI
SD
= 13.5A
D
= 12 Ω
GS
/dt = 100A/ µ s- - 29 ns
SD
/dt = 100A/ µ s- - 21 nC
SD
s
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
Typical Characteristic
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
125
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
-4
10
SINGLE PULSE
10
80
60
40
20
, DRAIN CURRENT (A)
D
I
0
150
25 50 75 100 125 150 175
Figure 2. Maximum Continuous Drain Current vs
-3
t, RECTANGULAR PULSE DURATION (s)
-2
10
VGS = 10V
VGS = 4.5V
TC, CASE TEMPERATURE (oC)
Case Temperature
P
DM
NOTES: DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-1
10
θJC
10
0
2
x R
θJC
t
+ T
1
t
2
C
1
10
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25oC
FOR TEMPERATURES
o
I = I
25
C DERATE PEAK
175 - T
150
0
10
C
1
10
, PEAK CURRENT (A)
DM
I
100
50
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
-5
10
VGS = 5V
ABOVE 25 CURRENT AS FOLLOWS:
-4
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002
Typical Characteristic (Continued)
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100
V
= 15V
DD
80
60
40
, DRAIN CURRENT (A)
D
I
20
TJ = 25oC
0
12341
TJ = 175oC
TJ = -55oC
VGS, GATE TO SOURCE VOLTAGE (V)
120
100
80
60
40
40
, DRAIN CURRENT (A)
D
I
20
0
0 0.5 1.0 1.5 2.0
VGS = 10V
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics
25
ID = 62A
20
15
, DRAIN TO SOURCE
DS(ON)
r
ID = 10A
10
ON RESISTANCE (mΩ)
5
246810
V
, GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
ON RESISTANCE
NORMALIZED DRAIN TO SOURCE
0.5
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
-80
0
-40 40 80
-40
-40
TJ, JUNCTION TEMPERATURE (oC)
40 80
VGS = 5V
VGS = 3V
TC = 25oC
VGS = 10V, ID = 62A
120 160 200
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-80 0 40 80 120 160 200-40 0
TJ, JUNCTION TEMPERATURE (oC)
VGS = VDS, ID = 250µA
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation Rev. B, January 2002
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.2
ID = 250µA
1.1
1.0
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
0.9
-80 -40 0 40 80 120 160 2000
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
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