Fairchild Semiconductor ISL9N308AD3ST, ISL9N308AD3 Datasheet

ISL9N308AD3 / ISL9N308AD3ST

N-Channel Logic Level UltraFET® Trench Power MOSFETs
30V, 50A, 8mΩ

ISL9N308AD3 / ISL9N308AD3ST

June 2002

PWM Optimized

General Description

This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

Applications

• DC/DC converters

Features

• Fast switching

•r

•r

•Q

•Q

•C

= 0.0064Ω (Typ), VGS = 10V

DS(ON)

= 0.010Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 24nC, VGS = 5V

g

(Typ) = 8nC

gd

(Typ) = 2600pF

ISS

D

D

G

S

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed Figure 4 A
Power dissipation

Derate above 25
Operating and Storage Temperature -55 to 175

= 25oC, VGS = 10V) Note 1

C

= 100oC, VGS = 4.5V) Note 1 48 A

C

= 25oC, VGS = 10V, R

C

o

C

C

G DS

= 25°C unless otherwise noted

= 52oC/W) 14 A

θJC

I-PAK

(TO-251AA)

G

S

50 A

100

0.67

W

W/oC

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-252, TO-251 1.5
Thermal Resistance Junction to Ambient TO-252, TO-251 100
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N308AD ISL9N308AD3ST TO-252AA 330mm 16mm 2500 units
N308AD ISL9N308AD3 TO-251AA Tube N/A 75 units

©2002 Fairchild Semiconductor Corporation

ISL9N308AD3 / ISL9N308AD3ST Rev C

o

C/W

o

C/W

o

C/W

ISL9N308AD3 / ISL9N308AD3ST

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

- - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 50A, VGS = 10V - 0.0064 0.008

Drain to Source On Resistance

D

= 48A, VGS = 4.5V - 0.010 0.012

I

D

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(5)
g(TH)
gs
gd

Input Capacitance
Output Capacitance - 520 - pF
Reverse Transfer Capacitance - 225 - pF
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 24 37 nC
Threshold Gate Charge VGS = 0V to 1V - 2.6 4.0 nC
Gate to Source Gate Charge - 7 - nC
Gate to Drain “Miller” Charge - 8 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 67 - ns
Turn-Off Delay Time - 35 - ns
Fall Time - 32 - ns
Turn-Off Time - - 100 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 14A

DD

V

= 4.5V, RGS = 6.2Ω

GS

= 15V

V

DD

I

= 48A

D

= 1.0mA

I

g

-2600- pF

-4568nC

- - 122 ns

µA

Ω

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 40 - ns
Turn-Off Delay Time - 64 - ns
Fall Time - 31 - ns
Turn-Off Time - - 142 ns

GS

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 3.2A, L = 3.0mH 215 - - µs

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes:
1: TO-251AA continuous current limited by package to 35A.

©2002 Fairchild Semiconductor Corporation

Source to Drain Diode Voltage
Reverse Recov ery Time ISD = 48A, dISD/dt = 100A/µs- - 26 ns

Reverse Recovered Charge ISD = 48A, dISD/dt = 100A/µs- - 14 nC

= 10V)

- - 71 ns

= 15V, ID = 14A

V

DD

= 10V, RGS = 6.2Ω

V

GS

I

= 48A - - 1.25 V

SD

= 20A - - 1.0 V

I

SD

ISL9N308AD3 / ISL9N308AD3ST Rev C

ISL9N308AD3 / ISL9N308AD3ST

Typical Characteristic T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Contin uous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS = 4.5V

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

VGS = 10V

1

t

2

C

1

10

1000

VGS = 10V

VGS = 5V

, PEAK CURRENT (A)

100

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

40

-5

10

©2002 Fairchild Semiconductor Corporation

Figure 3. Normalized Maximum Transient Thermal Impedance

TC = 25oC
FOR TEMPERATURES

ABOVE 25
CURRENT AS FOLLOWS:

I = I

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

o

C DERATE PEAK

175 - T

25

150

0

10

ISL9N308AD3 / ISL9N308AD3ST Rev C

C

10

1

ISL9N308AD3 / ISL9N308AD3ST

Typical Characteristic (Continued) T

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

75

50

, DRAIN CURRENT (A)

D

25

I

TJ = 25oC

0

12345

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Character istics

25

ID = 32A

20

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 25oC

T

C

100

VGS = 10V

75

50

, DRAIN CURRENT (A)

D

I

25

PULSE DURATION = 80µs

0

0 0.5 1.0 1.5 2.0

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4.5V

VGS = 3.5V

VGS = 3V

T

= 25oC

C

, DRAIN TO SOURCE

DS(ON)

r

ID = 14A

ON RESISTANCE (mΩ)

10

5

246810

ID = 50A

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 50A

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200

, JUNCTION TEMPERATURE (oC)

T

J

ID = 250µA

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

©2002 Fairchild Semiconductor Corporation

ISL9N308AD3 / ISL9N308AD3ST Rev C