Fairchild Semiconductor ISL9N307AS3ST, ISL9N307AP3 Datasheet

±

θ

ISL9N307AP3/ISL9N307AS3ST

January 2002

ISL9N307AP3/ISL9N307AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN

(FLANGE)

GATE

SOURCE

•r

•Q

•C

DRAIN

(FLANGE)

= 0.006 Ω (Typ), V

DS(ON)

= 0.010 Ω (Typ), V

DS(ON)

(Typ) = 28nC, V

g

(Typ) = 10nC

gd

(Typ) = 3000pF

ISS

SOURCE

DRAIN

GATE

GS

= 5V

GS

= 10V

= 4.5V

D

G

S

TO-263AB TO-220AB

T

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

T

, T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage

Drain Current

Continuous (T

= 25

C

= 100

C

= 25

C

o

C, V

o

C, V

o

C, V

Pulsed Figure 4 A

Power dissipation Derate above 25

o

C

Operating and Storage Temperature -55 to 175

= 25°C unless otherwise noted

A

20 V

= 10V)

GS

= 4.5V) 52 A

GS

= V, R

o

= 43

C/W) 16 A

JC

75 A

100

0.67

W/

W

o

C

o

C

Thermal Characteristics

R

JC

R

JA

R

JA

Thermal Resistance Junction to Case TO-220, TO-263 1.36

Thermal Resistance Junction to Ambient TO-220, TO-263 62

Thermal Resistance Junction to Ambient TO-263, 1in

2

copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N307AS ISL9N307AS3ST TO-263AB 330mm 24mm 800 units

N307AP ISL9N307AP3 TO-220AB Tube N/A 50 units

o

C/W

o

C/W

o

C/W

Rev. B, January 2002

µ

±

Ω

T

Electrical Characteristics

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage I

Zero Gate Voltage Drain Current

Gate to Source Leakage Current V

= 250 µ A, V

D

V

= 25V - - 1

DS

V

= 0V T

GS

= ± 20V - -

GS

= 0V 30 - - V

GS

o

= 150

C

- - 250

100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage V

Drain to Source On Resistance

= V

GS

I

= 75A, V

D

I

= 52A, V

D

, I

= 250 µ A1-3V

DS

D

= 10V - 0.006 0.007

GS

= 4.5V - 0.010 0.0115

GS

Dynamic Characteristics

Q

C

Q

ISS

OSS

RSS

g(TOT)

g(5)

g(TH)

gs

gd

Input Capacitance

Output Capacitance - 580 - pF

Reverse Transfer Capacitance - 250 - pF

Total Gate Charge at 10V V

Total Gate Charge at 5V V

Threshold Gate Charge V

Gate to Source Gate Charge - 11 - nC

V

= 15V, V

DS

f = 1MHz

= 0V to 10V

GS

= 0V to 5V - 28 42 nC

GS

= 0V to 1V - 3.0 4.5 nC

GS

= 0V,

V

DD

I

D

I

g

= 15V

= 52A

= 1.0mA

- 3000 - pF

50 75 nC

Gate to Drain “Miller” Charge - 10 - nC

µ

ISL9N307AP3/ISL9N307AS3ST

A

(V

= 4.5V)

GS

= 10V)

GS

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 20 - ns

Rise Time - 70 - ns

Turn-Off Delay Time - 40 - ns

Fall Time - 40 - ns

Turn-Off Time - - 120 ns

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 10 - ns

Rise Time - 45 - ns

Turn-Off Delay Time - 60 - ns

Fall Time - 35 - ns

Turn-Off Time - - 143 ns

Unclamped Inductive Switching

t

AV

Avalanche Time I

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage

Reverse Recovery Time I

Reverse Recovered Charge I

- - 135 ns

V

DD

V

GS

= 15V, I = 4.5V, R

= 16A

D

GS

= 5.0 Ω

- - 83 ns

V

= 15V, I

DD

V

= 10V, R

GS

= 3.3A, L = 3mH 220 - -

D

I

= 52A - - 1.25 V

SD

I

= 25A - - 1.0 V

SD

= 52A, dI

SD

= 52A, dI

SD

= 16A

D

= 5.0 Ω

GS

/dt = 100A/ µ s- - 26 ns

SD

/dt = 100A/ µ s- - 13 nC

SD

s

ISL9N307AP3/ISL9N307AS3ST

Typical Characteristic

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

150

80

60

VGS = 4.5V

40

, DRAIN CURRENT (A)

D

20

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

VGS = 10V

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

0.1

, NORMALIZED

JA

θθ

Z

THERMAL IMPEDANCE

0.01

-5

10

2000

1000

, PEAK CURRENT (A)

DM

I

100

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

50

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

P

DM

t

1

t

2

x R

+ T

θθθθJA

0

10

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25 CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

175 - T

150

0

10

C

A

1

10

1

10

Figure 4. Peak Current Capability

Typical Characteristic (Continued)

ISL9N307AP3/ISL9N307AS3ST

150

PULSE DURATION = 80µµµµs DUTY CYCLE = 0.5% MAX

125

100

, DRAIN CURRENT (A)

D

I

= 15V

V

DD

75

50

25

0

TJ = 25oC

12 34 5

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

150

TC = 25oC

125

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

VGS = 10V

PULSE DURATION = 80µµµµs

VGS = 3V

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX

Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics

20

)

ID = 30A

ΩΩ

15

10

, DRAIN TO SOURCE

ON RESISTANCE (mΩΩ

DS(ON)

r

5

246810

ID = 75A

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µµµµs DUTY CYCLE = 0.5% MAX

= 25oC

T

C

2.0 PULSE DURATION = 80µµµµs DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

VGS = 4.5V

VGS = 3.5V

VGS = 10V, ID = 75A

Figure 7. Drain to Source On Resistance vs Gate

Voltage and Drain Current

1.4

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µµµµA

Figure 9. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

ID = 250µµµµA

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Fairchild Semiconductor ISL9N307AS3ST, ISL9N307AP3 Datasheet

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