Fairchild Semiconductor ISL9N307AD3ST Datasheet

February 2002

ISL9N307AD3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

ISL9N307AD3ST

General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN (FLANGE)

GATE

SOURCE

Features

• Fast switching

•r

•Q

•C

= 0.006Ω (Typ), VGS = 10V

DS(ON)

= 0.010Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 28nC, VGS = 5V

g

(Typ) = 10nC

gd

(Typ) = 3000pF

ISS

D

G

S

TO-252

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current Continuous (T Continuous (T Continuous (T Pulsed Figure 4 A Power dissipation

Derate above 25

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 50 A

C

= 25oC, VGS = 10V, R

C

o

C

TA = 25°C unless otherwise noted

= 52oC/W) 15 A

θJA

50 A

100

0.67

W

W/oC

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-252 1.36 Thermal Resistance Junction to Ambient TO-252 100 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N307AD ISL9N307AD3ST TO-252AA 330mm 16mm 2500 units

o

C/W

o

C/W

o

C/W

Rev. B, February 2002

ISL9N307AD3ST

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

- - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 50A, VGS = 10V - 0.006 0.007

Drain to Source On Resistance

D

I

= 50A, VGS = 4.5V - 0.010 0.0115

D

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance Output Capacitance - 580 - pF Reverse Transfer Capacitance - 250 - pF Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 28 42 nC Threshold Gate Charge VGS = 0V to 1V - 3.0 4.5 nC Gate to Source Gate Charge - 11 - nC Gate to Drain “Miller” Charge - 10 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 20 - ns Rise Time - 70 - ns Turn-Off Delay Time - 40 - ns Fall Time - 40 - ns Turn-Off Time - - 120 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 15A

DD

V

= 4.5V, RGS = 5.0Ω

GS

= 15V

V

DD

I

= 50A

D

= 1.0mA

I

g

-3000- pF

-5075nC

- - 135 ns

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 10 - ns Rise Time - 45 - ns Turn-Off Delay Time - 60 - ns Fall Time - 35 - ns Turn-Off Time - - 143 ns

(VGS = 10V)

= 15V, ID = 15A

V

DD

= 10V, RGS = 5.0Ω

V

GS

- - 83 ns

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 3.3A, L = 3mH 220 - - µs

Drain-Source Diode Characteristics

I

= 50A - - 1. 25 V

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- - 26 ns

Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- - 13 nC

SD

= 25A - - 1.0 V

I

SD

Typical Characteristic

ISL9N307AD3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

SINGLE PULSE

-3

10

t, RECTANGULAR PULSE DURATION (s)

60

V

= 10V

40

20

, DRAIN CURRENT (A)

D

I

GS

V

= 4.5V

GS

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

x R

2

+ T

θJC

C

1

10

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

0

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

VGS = 10V

, PEAK CURRENT (A)

DM

I

100

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

40

-5

10

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

ISL9N307AD3ST

Typical Characteristic

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

75

50

25

, DRAIN CURRENT (A)

D

I

0

TJ = 25oC

TJ = 175oC

12345

VGS, GATE TO SOURCE VOLTAGE (V)

(Continued)

TJ = -55oC

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Characteristics

20

15

ID = 28A

ID = 50A

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

100

TC = 25oC

VGS = 10V

75

50

25

, DRAIN CURRENT (A)

D

I

0

00.511.52

VDS, DRAIN TO SOURCE VOLTAGE (V)

2.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.5

VGS = 4.5V

VGS = 3.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 3V

10

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

DS(ON)

r

5

246810

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID =50A

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2 ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temp er atu re

Fairchild Semiconductor ISL9N307AD3ST Datasheet

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