Fairchild Semiconductor ISL9N306AP3, ISL9N306AS3ST Datasheet

February 2002

ISL9N306AP3/ISL9N306AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

ISL9N306AP3/ISL9N306AS3ST

General Description

This device employs a new advanced trench MOSFET

Features

• Fast switching
technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN

(FLANGE)

GATE

SOURCE

•r

•r

•Q

•Q

•C

DRAIN

(FLANGE)

= 0.0052Ω (Typ), VGS = 10V

DS(ON)

= 0.0085Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 30nC, VGS = 5V

g

(Typ) = 11nC

gd

(Typ) = 3400pF

ISS

SOURCE

DRAIN

GATE

D

G

S

TO-263AB TO-220AB

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 61 A

C

= 25oC, VGS = V, R

C

Pulsed Figure 4 A
Power dissipation

Derate above 25

o

C

Operating and Storage Temperature -55 to 175

TA = 25°C unless otherwise noted

75 A

= 43oC/W) 18 A

θJC

125

0.83

W

W/oC

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220, TO-263 1.2
Thermal Resistance Junction to Ambient TO-220, TO-263 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N306AS ISL9N306AS3ST TO-263AB 330mm 24mm 800 units
N306AP ISL9N306AP3 TO-220AB Tube N/A 50 units

©2002 Fairchild Semiconductor Corporation

o

C/W

o

C/W

o

C/W

Rev. B, February 2002

ISL9N306AP3/ISL9N306AS3ST

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

- - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 75A, VGS = 10V - 0.0052 0.0060

Drain to Source On Resistance

D

I

= 61A, VGS = 4.5V - 0.0085 0.0095

D

Dynamic Characteristics

Q

C

ISS

C

OSS

C

RSS
g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 650 - pF
Reverse Transfer Capacitance - 300 - pF
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 30 45 nC
Threshold Gate Charge VGS = 0V to 1V - 3.0 4.5 nC
Gate to Source Gate Charge - 10 - nC
Gate to Drain “Miller” Charge - 11 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 16 - ns
Rise Time - 70 - ns
Turn-Off Delay Time - 34 - ns
Fall Time - 30 - ns
Turn-Off Time - - 97 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 18A

DD

V

= 4.5V, RGS = 4.3Ω

GS

= 15V

V

DD

I

= 61A

D

= 1.0mA

I

g

-3400- pF

60 90 nC

- - 131 ns

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 10 - ns
Rise Time - 43 - ns
Turn-Off Delay Time - 62 - ns
Fall Time - 29 - ns
Turn-Off Time - - 137 ns

(VGS = 10V)

= 15V, ID = 18A

V

DD

= 10V, RGS = 4.3Ω

V

GS

- - 80 ns

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 3.6A, L = 3mH 240 - - µs

Drain-Source Diode Characteristics

I

= 61A - - 1.25 V

V

SD

t

rr

Q

RR

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 61A, dISD/dt = 100A/µs- - 35 ns

Reverse Recovered Charge ISD = 61A, dISD/dt = 100A/µs- - 30 nC

SD

= 25A - - 1.0 V

I

SD

Typical Characteristic

ISL9N306AP3/ISL9N306AS3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE NOTES:

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

90

75

VGS = 10V

60

VGS = 4.5V

45

30

, DRAIN CURRENT (A)

D

I

15

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

2

DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-2

10

-1

10

2

x R

+ T

θJA

θJA

A

0

10

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

, PEAK CURRENT (A)

DM

I

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

175 - T

25

0

10

150

C

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

ISL9N306AP3/ISL9N306AS3ST

Typical Characteristic

150

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

100

50

, DRAIN CURRENT (A)

D

I

TJ = 25oC

0

12345

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Characteristics

25

20

15

TJ = 175oC

VGS, GATE TO SOURCE VOLTAGE (V )

ID = 61A

(Continued)

TJ = -55oC

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TC = 25oC

150

TC = 25oC

100

50

, DRAIN CURRENT (A)

D

I

0

0 0.5 1.0 1.5 2.0

2.0

1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 4.5V

VGS = 3.5V

VGS = 3V

, DRAIN TO SOURCE

r

ID = 30A

ON RESISTANCE (mΩ)

10

DS(ON)

5

246810

ID = 75A

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.4

1.0

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.2

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 75A

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

ID = 250µA

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temp er atu re

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002