Fairchild Semiconductor ISL9N306AD3ST, ISL9N306AD3 Datasheet

June 2003

ISL9N306AD3 / ISL9N306AD3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ

ISL9N306AD3 / ISL9N306AD3ST

General Description

This device employs a new advanced trench MOSFET

Features

•Fast switching technology and features low gate charge while maintaining low on-resistance.

Optim ized for swit ch ing appl icat ions , t his devi ce i mpr ove s the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN (FLANGE)

DRAIN

GATE

SOURCE

(FLANGE)

TO-252

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

A

•r

•Q

•C

TO-251

= 0.0052Ω (Typ), VGS = 10V

DS(ON)

= 0.0085Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 30nC, VGS = 5V

g

(Typ) = 11nC

gd

(Typ) = 3400pF

ISS

SOURCE

DRAIN

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 30 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 50 A

C

= 25oC, VGS = V, R

C

= 52oC/W) 16 A

θJC

50 A

Pulsed Figure 4 A

P

D

T

, T

J

STG

Power dissipation Derate above 25

o

C

Operating and Storage Temperature -55 to 175

125

0.83

W

W/oC

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-251, TO-252 1.2 Thermal Resistance Junction to Ambient TO-251, TO-252 100 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad ar ea 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N306AD ISL9N306AD3ST TO-252AA 330mm 16mm 2500 units N306AD ISL9N306AD3 TO-25 1AA Tube N/A 75 unit s

ISL9N 306AD3 / ISL9N306AD3ST Rev. B2

o

C/W

o

C/W

o

C/W

ISL9N306AD3 / ISL9N306AD3ST

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea kd ow n Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

--250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 50A, VGS = 10V - 0.0052 0.0060

Drain to S ou r c e On Re si st ance

D

= 50A, VGS = 4.5V - 0.0085 0.0095

I

D

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(5) g(TH) gs gd

Input Capacitance Output Capacitance - 650 - pF Reverse Transfer Capacitance - 300 - pF Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 30 45 nC Threshold Gate Charge VGS = 0V to 1V - 3.0 4.5 nC Gate to Source Gate Charg e - 10 - n C Gate to Drain “Miller” Charge - 11 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 16 - ns Rise Time - 70 - ns Turn-Off Delay Time - 34 - ns Fall Time - 30 - ns Turn-Off T ime - - 97 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 16A

DD

V

= 4.5V, RGS = 4.3Ω

GS

= 15V

V

DD

I

= 50A

D

I

= 1.0mA

g

-3400- pF

-6090nC

--131ns

µA

Ω

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 10 - ns Rise Time - 43 - ns Turn-Off Delay Time - 62 - ns Fall Time - 29 - ns Turn-Off T ime - - 137 ns

GS

= 10V)

V

= 15V, ID = 16A

DD

V

= 10V, RGS = 4.3Ω

GS

- - 80 ns

Unclamped Inductive Switching

t

AV

Avalanche Tim e ID = 30A, L = 200µH428--µs

Drain-Source Diode Characteristics

I

= 50A - - 1.25 V

V

SD

t

rr

Q

RR

Source to Drain Diode Voltage Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- - 35 ns

Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- - 30 nC

SD

= 25A - - 1.0 V

I

SD

Typical Cha racteristic

ISL9N306AD3 / ISL9N306AD3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

SINGLE PULSE

-3

10

t, RECTANGULAR PULSE DURATION (s)

60

50

VGS = 10V

40

VGS = 4.5V

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

P

DM

t

1

t

0

x R

θJC

+ T

2

C

1

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

θJC

10

Figure 3. Normalize d Maxim um transient Thermal Impedance

2000

1000

, PEAK CURRENT (A)

DM

I

100

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

40

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25 CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

175 – T

150

0

10

C

1

10

Figure 4. Peak Current Capability

Typical Cha racteristic (Conti nued)

ISL9N306AD3 / ISL9N306AD3ST

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

75

50

, DRAIN CURRENT (A)

25

D

I

TJ = 25oC

0

12345

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

100

VGS = 10V

75

50

, DRAIN CURRENT (A)

25

D

I

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4.5V

T

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics

25

20

15

, DRAIN TO SOURCE

DS(ON)

r

ID =5A

ON RESISTANCE (mΩ)

10

5

246810

ID = 25A

ID = 50A

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

T

= 25oC

C

2.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

= 25oC

C

VGS = 10V, ID = 50A

VGS = 3.5V

VGS = 3V

Figure 7. Drain to Source O n Resistance vs Gate

Voltage and Drain Current

1.4

1.0

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.2

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 9. Normali zed Gate Threshold Voltage vs

Junction Temperatur e

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200 T

, JUNCTION TEMPERATURE (oC)

J

ID = 250µA

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature