Fairchild Semiconductor IRLW620A Datasheet

IRLW/I620A

BV

DSS

= 200 V

R

DS(on)

= 0.8Ω

ID = 5 A

200

3.3

2.1 12

±

20

29

3.3

5

3.1 33

0.26

- 55 to +150

300

3.81 40

62.5

--

1

♦

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

150°C Operating Temperature

♦

Lower Leakage Current: 10µA (Max.) @ V

DS

= 200V

♦

Lower R

DS(ON)

: 0.609Ω (Typ.)

$GYDQF HG 3RZH U 026)(7

Thermal Resistance

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

R

θJC

R

θ

JA

R

θ

JA

°C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

D2-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I2-PAK

*

When mounted on the minimum pad size recommended ( PC B Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage Continuous Drain Current (T

C

=25°C)

Continuous Drain Current (T

C

=100°C)

Drain Current-Pulsed

(1)

Gate-to-Source Volta ge Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(3)

Total Power Dissipation (TA=25°C) Total Power Dissipation (T

C

=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8

from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

I

D

T

J

, T

STG

T

L

A V

mJ

A

mJ

V/ns

W W

W/°C

A

°C

V

DSS

V

*

Rev. B

IRLW/I620A

200

--

1.0

--

0.18

--

55 25

8 6

24

6

10.3

2.0

4.4

--

2.0

100

-100 10

100

0.8

--

430

70 30 25 20 60 20 15

--

3.3

330

--

140

0.59

5

18

1.5

--

Notes;

(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature (2) L=2mH, I

AS

=5A, VDD=50V, RG=27Ω, Starting TJ =25 °C

(3) I

SD

≤

5A, di/d t ≤ 180A/µs, V

DD

≤

BV

DSS

, Starting TJ =25 °C (4) Pulse Test : Pulse Width = 250µs, Duty Cycl e ≤ 2% (5) Essent ially Independent of Operati ng Temperature

2

1&+$11(/

32:(5 026)(7

Electrical Characteristics

(TC=25°C unless otherwise specified)

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forwar d Gate-Source Leakage , Revers e

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (

Miller ) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

∆BV/∆T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/°C

V

nA

µ

A

Ω

pF

ns

nC

--

V

GS

=0V,ID=250µA

I

D

=250µA

See Fig 7

VDS=5V,ID=250µA V

GS

=20V

V

GS

=-20V

V

DS

=200V

V

DS

=160V,TC=125°C

V

GS

=5V,ID=2.5A

(4)

VDS=40V,ID=2.5A

(4)

VDD=100V,ID=5A, R

G

=9

Ω

See Fig 13

(4) (5)

VDS=160V,VGS=5V, I

D

=5A

See Fig 6 & Fig 12

(4) (5)

Drain-to-Source Leakage Current

V

GS

=0V,VDS=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current Pulsed- S o u rce Curren t

(1)

Diode Forward Voltage

(4)

Reverse Recove ry Tim e Reverse Recovery Ch arge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A V

ns

µ

C

Integral reverse pn-diode in the MOSFET T

J

=25°C,IS=5A,VGS=0V

T

J

=25°C,IF=5A

di

F

/dt=100A/µs

(4)

IRLW/I620A

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250 µs Pulse Tes t

2. TC = 25 oC

V

GS

Top : 7 .0 V 6 .0 V 5 .5 V 5 .0 V 4 .5 V 4 .0 V 3 .5 V Bot to m : 3 .0 V

I

D

, Drain Current [A]

VDS , Drain -Source Voltage [V]

0 3 6 9 12 15 18

0.0

0.5

1.0

1.5

2.0

@ Note : TJ = 25 oC

VGS = 10 V

VGS = 5 V

R

DS(on)

, [

Ω

]

Drain-So urce On-Resistance

ID , Drain Current [A]

024681012

0

2

4

6

VDS = 160 V

VDS = 100 V

VDS = 40 V

@ Notes : ID = 5 A

V

GS

, Gate-Source Voltage [V]

QG , Total Gate Charge [nC]

0246810

10

-1

10

0

10

1

25 oC

150 oC

- 55 oC

@ Note s :

1. V

GS

= 0 V

2. V

DS

= 40 V

3. 2 50

µ

s Puls e Test

I

D

, Drain Current [A]

VGS , Gate-Source Voltage [V]

0.40.60.81.01.21.41.61.8

10

-1

10

0

10

1

150 oC

25 oC

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

I

DR

, Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

10

0

10

1

0

100

200

300

400

500

C

iss

= Cgs+ Cgd ( Cds= shorted )

C

oss

= Cds+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacita nce [pF]

VDS , Drain -Source Voltage [V ]

3

1&+$11(/

32:(5 026)(7

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drai n-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent