Fairchild Semiconductor HGTP7N60C3D Datasheet

HGTP7N60C3D, HGT1S7N60C3DS

Data Sheet December 2001

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP7N60C3D and HGT1 S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipol ar transis tors. Thes e devic es hav e the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate volta ge drop v aries o nly moder ately bet ween 2 5

150

C. The IGBT used is de v el opmen tal type TA49115. The

C and

diode used in anti-parallel with the IGBT i s development al type TA49057.

The IGBT is ideal for many high voltage switching applications operating at mod erate fr equencies where l ow condu ction loss es are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49121.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP7N60C3D TO-220AB G7N60C3D HGT1S7N60C3DS TO-263AB G7N60C3D

NOTE: When ordering, use the entire p art number. Add t he suffix 9A to obtain the T O-263AB varian t in tape and reel, i.e. HGT1S7N60C3DS9A.

Symbol

Features

• 14A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduct ion Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

COLLECTOR (FLANGE)

JEDEC TO-263AB

GATE

EMITTER

COLLECTOR

GATE

COLLECTOR (FLANGE)

= 150oC

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

HGTP7N60C3D, HGT1S7N60C3DS

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGTP7N60C3D, HGT1S7N60C3DS UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

Average Diode Forward Current at 110

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T Pow er Dissi pation Total at T

Power Dissipation Derating T

= 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 40A at 480V

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Not e 2) at V Short Circuit Withstand Time (Not e 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

(AVG)

, T

C25

C110

GES

GEM

STG

L SC SC

14 A

7A 8A

56 A

±20 V ±30 V

60 W

-40 to 150 260

C 1 µs 8 µs

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications

= 360V, TJ = 125oC, RG = 50Ω.

CE(PK)

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V Gate-Emitter Leakage Current I

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E Diode Forward Voltage V Diode Reverse Recovery Time t

Thermal Resistance R

GEP

G(ON)

d(ON)I

d(OFF)I

OFF

θJC

IC = 250µA, VGE = 0V 600 - - V VCE = BV V

= I

= BV

C110

= 15V

CES CES

IC = 250µA, VCE = V

TC = 25oC - - 250 µA TC = 150oC--2.0mA T

= 25oC-1.62.0V

= 150oC-1.92.4V

GETC

= 25oC 3.0 5.0 6.0 V

VGE = ±25V - - ±250 nA

= 150oC, RG = 50Ω,

= 15V, L = 1mH

IC = I IC = I

, VCE = 0.5 BV

C110

= 0.5 BV

CES

TJ = 150oC I

= I

C110

= 0.8 BV

CE(PK)

VGE = 15V R

= 50Ω

L = 1mH

V V

CES

VGE = 15V - 23 30 nC V

CES

= 480V 40 - - A

CE(PK)

= 600V 6 - - A

CE(PK)

-8-V

= 20V - 30 38 nC

-8.5- ns

- 11.5 - ns

- 350 400 ns

- 140 275 ns

- 165 - µJ

- 600 - µJ IEC = 7A - 1.9 2.5 V IEC = 7A, dIEC/dt = 200A/µs - 25 37 ns I

= 1A, dIEC/dt = 200A/µs - 18 30 ns

IGBT - - 2.1 Diode - - 2.0

o o

C/W C/W

NOTE:

3. Turn-Off Energy Loss (E at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard

No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc es the true total Turn-Off Energy Loss. Turn-On losses include diode losses.

Typical Performance Curves

HGTP7N60C3D, HGT1S7N60C3DS

DUTY CYCLE <0.5%, V PULSE DURATION = 250µs

= 150oC

TC = 25oC

= -40oC

, COLLECTOR TO EMITTER CURRENT (A)

46 81012

VGE, GATE TO EMITTER VOLTAGE (V)

= 10V

PULSE DURATION = 250µs, DUTY CYCLE <0.5%,

= 25oC

VGE = 15.0V

, COLLECTOR TO EMITTER CURRENT (A)

0246810

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

12.0V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VGE = 10V

, COLLECTOR TO EMITTER CURRENT (A)

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

TC = -40oC

TC = 150oC

TC = 25oC

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VGE = 15V

, COLLECTOR TO EMITTER CURRENT (A)

012345

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TC = -40oC

10.0V

9.0V

8.5V

8.0V

7.5V

7.0V

TC = 25oC

TC = 150oC

FIGURE 3. COLLECTOR TO EMITTE R ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTE R ON-STATE VOLTAGE

, DC COLLECTOR CURRENT (A)

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE

= 15V

VCE = 360V, RG = 50Ω, TJ = 125oC

, SHORT CIRCUIT WITHSTAND TIME (µs)

10 11 12

, GATE TO EMITTER VOLTAGE (V)

140

120

100

14 1513

, PEAK SHORT CIRCUIT CURRENT (A) I

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

TEMPERATURE

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