Fairchild Semiconductor HGTP7N60A4, HGTG7N60A4, HGT1S7N60A4S Datasheet

HGT1S7N60A4S9A, HGTG7N60A4

Data Sheet August 2003

HGTP7N60A4

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N6 0A4 and HGTP7N 60A4
are MOS gated high voltage switching devices combining
the best fe atures of MOSFETs and bipolar t ransistors . These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.

PART NUMBER PACKAGE BRAND

HGT1S7N60A4S9A TO-263AB 7N60A4
HGTG7N60A4 TO-247 7N60A4
HGTP7N60A4 TO-220AB 7N60A4

NOTE: When ordering, use the entire part number.

o

C and 150oC.

Features

• >100kHz Operation at 390V, 7A

• 200kHz Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time

. . . . . . . . . . . . . . . . . . . 75ns at T

• Low Conduction Loss

SymbolOrdering Information

G

= 125oC

J

C

E

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

E

C

G

E
C
G

COLLECTOR

COLLECTOR

(BOTTOM SIDE METAL)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-263AB

G

E

(FLANGE)

COLLECTOR
(FLANGE)

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (N o t e 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Single Pulse Avalanche Energy at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V

J

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

C

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

AS

D

, T

J

STG

Maximum Lead T emperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Device M aximum Ratings” m ay cause permanent da mage to the device. This is a stress only rating and operation of th e
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

34 A
14 A
56 A

±20 V
±30 V

25mJ at 7A

125 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Pulsed Avalanche Energy E
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

AS

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2mA

J

= 7A,

V

GE

= 15V

T

= 25oC-1.92.7V

J

T

= 125oC-1.62.2V

J

IC = 250µA, VCE = 600V 4.5 5.9 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 25Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

35 - - A

ICE = 7A, L = 500µH25--mJ
IC = 7A, VCE = 300V - 9. 0 - V
IC = 7A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC
I

= 7A

CE

= 390V

V

CE

= 15V

V

GE

R

= 25Ω

G

L = 1mH
Test Circuit (Figure 20)

V

= 15V - 37 45 nC

GE

V

= 20V - 48 60 nC

GE

-11- ns

-11- ns

- 100 - ns

-45- ns

-55- µJ

- 120 150 µJ

-6075µJ

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC

= 7A

I

CE

= 390V

V

CE

V

= 15V

GE

= 25Ω

R

G

L = 1mH
Test Circuit (Figure 20)

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

35

30

25

V

= 15V

GE

40

TJ = 150oC, RG = 25Ω, V

30

-10- ns

-7-ns

- 130 150 ns

-7585ns

-50- µJ

- 200 215 µJ

- 125 170 µJ

--1.0oC/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 100µH

GE

ON2

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

200

100

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

P

= CONDUCTION DISSIPATION

C

, OPERATING FREQUENCY (kHz)

MAX

f

30

(DUTY FACTOR = 50%)

R

= 1.0oC/W, SEE NOTES

ØJC

TJ = 125oC, RG = 25Ω, L = 2mH, V

1

d(OFF)I

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

ON2

+ t

d(ON)I

+ E

OFF

)

)

= 390V

CE

TCV

o

75

C

15V

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

GE

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

s)

µ

14

12

10

8

6

20510

, SHORT CIRCUIT WITHSTAND TIME (

4

SC

t

10

VCE = 390V, RG = 25Ω, TJ = 125oC

I

SC

t

SC

11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

13 14

14016

120

100

80

60

40

20

, PEAK SHORT CIRCUIT CURRENT (A )

SC

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1