Fairchild Semiconductor HGTP5N120BND, HGTG5N120BND Datasheet

HGTG5N120BND, HGTP5N120BND

Data Sheet May 2003

21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-
Punch Through (NPT) IGBT designs. They are new

members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors . This de vice h as the hi gh input i mpedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49308. The D io de u se d i s the developmen t ty pe TA49058
(Part number RHRD6120).

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, pow er su ppl ies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49306.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG5N120BND TO-247 5N120BND
HGTP5N120BND TO-220AB 5N120BND

NOTE: When ordering, use the entire part number. i.e.,
HGTG5N120BND.

Features

• 21A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . .175ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

E

COLLECTOR

(FLANGE)

= 150oC

J

C

G

Symbol

C

COLLECTOR

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-220AB (ALTERNATE VERSION)

(FLANGE)

E

C

G

©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1

HGTG5N120BND, HGTP5N120BND

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG5N120BND
HGTP5N120BND UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

C

, T

J

C25

C110

CM

GES

GEM

D

STG

21 A
10 A
40 A

±20 V
±30 V

167 W

-55 to 150

o

C
Maximum Lead T emperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

L

pkg

SC
SC

300
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 25Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

IC = 250µA, VGE = 0V 1200 - - V
VCE = 1200V TC = 25oC - - 250 µA

= 125oC - 100 - µA

T

C

T

= 150oC--1.5mA

C

= 5A,

= 15V

V

GE

IC = 45µA, VCE = V

T

= 25oC - 2.45 2.7 V

C

T

= 150oC-3.74.2V

C

GE

6.0 6.8 - V

VGE = ±20V - - ±250 nA

= 150oC, RG = 25Ω, VGE = 15V,

J

L = 5mH, V

CE(PK)

= 1200V

30 - - A

IC = 5A, VCE = 600V - 10.5 - V
IC = 5A,

= 600V

V

CE

IGBT and Diode at TJ = 25oC,

= 5A,

I

CE

V

= 960V,

CE

= 15V,

V

GE

= 25Ω,

R

G

L = 5mH,
Test Circuit (Figure 20)

V

= 15V - 53 65 nC

GE

= 20V - 60 72 nC

V

GE

-2225ns

-1520ns

- 160 180 ns

- 130 160 ns

- 450 600 µJ

- 390 450 µJ

©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1

HGTG5N120BND, HGTP5N120BND

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON

OFF

EC

rr

θJC

IGBT and Diode at TJ = 150oC,

= 5A,

I

CE

= 960V,

V

CE

V

= 15V,

GE

= 25Ω,

R

G

L = 5mH,
Test Circuit (Figure 20)

IEC = 10A - 2.70 3.50 V
IEC = 7A, dlEC/dt = 200A/µs - 50 65 ns

= 1A, dlEC/dt = 200A/µs - 30 40 ns

I

EC

IGBT - - 0.75

-2025ns

-1520ns

- 182 280 ns

- 175 200 ns

- 1000 1300 µJ

- 560 800 µJ

Diode - - 1.75

NOTE:

3. Turn-Off Energy Loss (E
ending at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

) is defined as the integral of the inst antaneous power loss starting at the trailing edge of the input pulse and

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for

CE

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

25

V

= 15V

GE

20

15

10

5

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

35

TJ = 150oC, RG = 25Ω, V

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 15V, L = 5mH

GE

600 800400200 1000 1200

14000

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1