Fairchild Semiconductor HGTP3N60A4D Datasheet

COLLECTOR
(FLANGE)

E

G

C

G

E

COLLECTOR

(FLANGE)

HGT1S3N60A4DS, HGTP3N60A4D

Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between

o

25

C and 150

o

C. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.

This device has been
optimized for high frequency switch mode power
supplies

.

Formerly Developmental Type TA49329.

Ordering Information

PART NUMBER PACKAGE BRAND

HGT1S3N60A4DS TO-263AB 3N60A4D

HGTP3N60A4D TO-220AB 3N60A4D

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.

Features

• >100kHz Operation At 390V, 3A

• 200kHz Operation At 390V, 2.5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.Fairchildsemi.com

Packaging

JEDEC TO-263AB

JEDEC TO-220AB

= 125

J

o

C

Symbol

C

G

E

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B

±

±

µ

±

HGT1S3N60A4DS, HGTP3N60A4D

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

HGT1S3N60A4DS

HGTP3N60A4D UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At T

At T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T

Power Dissipation Total at T

Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

o

= 110

C

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

o

= 150

J

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

C

> 25

C

C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 15A at 600V

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.58 W/

C25

C110

CM

GES

GEM

D

, T

J

STG

L

PKG

17 A

8A

40 A

20 V

30 V

70 W

o

C

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

o

T

= 25

Electrical Specifications

C, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV

Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CES

CES

CE(SAT)

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V

On-State Gate Charge Q

Current Turn-On Delay Time t

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-On Energy (Note 2) E

Turn-On Energy (Note 2) E

Turn-Off Energy (Note 3) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI

ON1

ON2

OFF

I

= 250 µ A, V

C

V

= 600V T

CE

I

= 3A,

C

V

= 15V

GE

I

= 250 µ A, V

C

V

= ± 20V - -

GE

= 150

J

L = 200 µ H, V

I

= 3A, V

C

I

= 3A,

C

V

= 300V

CE

IGBT and Diode at T
I

= 3A,

CE

V

= 390V,

CE

V

= 15V,

GE

R

= 50 Ω,

G

L = 1mH,
Test Circuit (Figure 24)

= 0V 600 - - V

GE

o

= 25

C - - 250

J

T

T

T

= 600V 4.5 6.1 7.0 V

CE

o

C, R

= 50 Ω , V

G

= 600V

CE

= 300V - 8.8 - V

CE

V

V

= 25

J

o

= 125

J

J

J

GE

GE

C - - 3.0 mA

o

= 25

C - 2.0 2.7 V

o

= 125

C - 1.6 2.2 V

GE

= 15V,

15 - - A

= 15V - 21 25 nC

= 20V - 26 32 nC

o

C,

-73 - ns

-47 - ns

-37 - µ J

-5570 µ J

-2535 µ J

A

250 nA

-6 - ns

-11 - ns

©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

12

0

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

4

300 400200100 500 600

0

16

20

8

TJ = 150oC, RG = 50Ω, V

GE

= 15V, L = 200µH

HGT1S3N60A4DS, HGTP3N60A4D

µ

θ

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t

Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t

Turn-On Energy (Note 2) E

Turn-On Energy (Note 2) E

Turn-Off Energy (Note 3) E

Diode Forward Voltage V

Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON1

ON2

OFF

EC

rr

JC

IGBT and Diode at T
I

= 3A,

CE

V

= 390V, V

CE

R

= 50 Ω,

G

L = 1mH,

GE

= 15V,

Test Circuit (Figure 24)

I

= 3A - 2.25 - V

EC

I

EC

I

EC

= 3A, dI

= 1A, dI

/dt = 200A/ µ s - 29 - ns

EC

/dt = 200A/ µ s - 19 - ns

EC

IGBT - - 1.8

= 125

J

o

C,

- 5.5 8 ns

-1215ns

- 110 165 ns

- 70 100 ns

-37 - µ J

- 90 100

-5080 µ J

Diode - - 3.5

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 24.

3. Turn-Off Energy Loss (E
ending at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for

CE

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

o

o

J

C/W

C/W

ON2

Typical Performance Curves Unless Otherwise Specified

, DC COLLECTOR CURRENT (A)

CE

I

FIGURE 1. DC COLLECTOR CURRENT vs CASE

20

16

12

8

4

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

= 15V

GE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B