Fairchild Semiconductor HGTP3N60A4, HGTD3N60A4S Datasheet

HGTD3N60A4S, HGTP3N60A4

Data Sheet August 2003

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the H GTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipol ar transis tors. Thes e devic es hav e the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on­state volta ge drop v aries o nly moder ately bet ween 2 5

o

150

C.

o

C and

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49327.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD3N60A4S TO-252AA 3N60A4
HGTP3N60A4 TO-220AB 3N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• >100kHz Operation at 390V, 3A

• 200kHz Operation at 390V, 2.5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

•12mJ E

Capability

AS

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Packaging

JEDEC TO-252AA

G

E

COLLECTOR

(FLANGE)

JEDEC TO-220AB

= 125oC

J

G

COLLECTOR

(FLANGE)

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

E

C

G

HGTD3N60A4S, HGTP3N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltag e. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Single Pulse Avalanche Energy at T
Power Dissipation Total at T
Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . .SSOA 15A at 600V

J

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

C

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.56 W/oC

C

Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

AS

D

, T

J

STG

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

17 A

8A

40 A

±20 V
±30 V

12mJ at 3A

70 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Pulsed Avalanche Energy E
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

AS

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2.0mA

J

= 3A,

V

GE

= 15V

T

= 25oC-2.02.7V

J

T

= 125oC-1.62.2V

J

IC = 250µA, VCE = 600V 4.5 6.1 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 50Ω, VGE = 15V

J

L = 200µH, V

CE

= 600V

15 - - A

ICE = 3A, L = 2.7mH 12 - - mJ
IC = 3A, VCE = 300V - 8.8 - V
IC = 3A,

V

= 300V

CE

IGBT and Diode at TJ = 25oC

= 3A

I

CE

= 390V

V

CE

V

= 15V

GE

= 50Ω

R

G

L = 1mH
Test Circuit - Figure 20

= 15V - 21 25 nC

V

GE

V

= 20V - 26 32 nC

GE

-6-ns

-11- ns

-73- ns

-47- ns

-37- µJ

-5570µJ

-2535µJ

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1

HGTD3N60A4S, HGTP3N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 3A

CE

= 390V

V

CE

= 15V

V

GE

R

= 50Ω

G

L = 1mH
Test Circuit - Figure 20

NOTES:

2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

Typical Performance Curves Unless Otherwise Specified

20

16

V

= 15V

GE

20

TJ = 150oC, RG = 50Ω, V

16

-5.58 ns

-1215ns

- 110 165 ns

- 70 100 ns

-37- µJ

- 90 100 µJ

-5080µJ

--1.8oC/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 200µH

GE

ON2

12

8

4

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

600

300

200

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

100

P

= CONDUCTION DISSIPATION

C

, OPERATING FREQUENCY (kHz)

MAX

f

50

(DUTY FACTOR = 50%)
= 1.8oC/W, SEE NOTES

R

ØJC

TJ = 125oC, RG = 50Ω, L = 1mH, V

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

)

= 390V

CE

TCV

o

C

75

GE

15V

54

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20 64

VCE = 390V, RG = 50Ω, TJ = 125oC

t

SC

16

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

623

t

10 11 12 15

, GATE TO EMITTER V OLTAGE (V)

V

GE

I

SC

13 14

5618

48

40

32

24

16

8

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

0

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGTD3N60A4S, HGTP3N60A4 Rev. B1