Fairchild Semiconductor HGTP2N120CN, HGT1S2N120CN Datasheet
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
G
COLLECTOR
E
(FLANGE)
HGTD2N120CNS, HGTP2N120CN,
HGT1S2N120CNS
Data Sheet December 2001
13A, 1200V, NPT Series N-Channel IGBT
The HGTD2N120CNS, HGTP2N120CN, and
HGT1S2N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49313.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP2N120CN TO-220AB 2N120CN
HGTD2N120CNS TO-252AA 2N120C
HGT1S2N120CNS TO-263AB 2N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.
Features
• 13A, 1200V, T
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
= 25
C
o
C
Packaging
JEDEC TO-220AB
= 150
J
o
C
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
JEDEC TO-252AA
JEDEC TO-263AB
©2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B
±
±
8 µ
µ
µ
±
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Absolute Maximum Ratings
T
o
= 25
C, Unless Otherwise Specified
C
HGTD2N120CNS
HGTP2N120CN,
HGT1S2N120CNS UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At T
At T
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
o
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
o
= 110
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
= 150
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 13A at 1200V
J
o
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
o
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
C
C25
C110
CM
GES
GEM
D
AV
, T
J
STG
13 A
7A
20 A
20 V
30 V
104 W
o
C
18 mJ
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
L
pkg
SC
300
260
o
C
o
C
s
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
= 3A, L = 4mH.
3. V
CE
CE(PK)
= 840V, T
= 125
J
o
C, R
= 51 Ω .
G
o
T
= 25
Electrical Specifications
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT)
GE(TH)
GES
Switching SOA SSOA T
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
I
= 250 µ A, V
C
I
= 10mA, V
C
V
= 1200V T
CE
I
= 2.6A,
C
V
= 15V
GE
I
= 45 µ A, V
C
V
= ± 20V - -
GE
= 150
J
L = 5mH, V
I
= 2.6A, V
C
I
= 2.6A,
C
V
= 600V
CE
= 0V 1200 - - V
GE
= 0V 15 - - V
GE
o
= 25
C - - 100
C
T
T
T
T
= V
CE
GE
o
C, R
= 51 Ω, V
G
= 1200V
CE(PK)
= 600V - 10.2 - V
CE
V
V
o
= 125
C
C
C
C
C - 100 -
o
= 150
C - - 1.0 mA
o
= 25
C - 2.05 2.40 V
o
= 150
C - 2.75 3.50 V
6.4 6.7 - V
= 15V,
GE
= 15V - 30 36 nC
GE
= 20V - 36 43 nC
GE
13 - - A
A
A
250 nA
©2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
6
600 800400200 1000 1200
0
12
14
8
2
TJ = 150oC, RG = 51Ω, V
GE
= 15V, L = 5mH
16
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
µ
µ
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Thermal Resistance Junction To Case R
rI
fI
ON1
ON2
OFF
rI
fI
ON1
ON2
OFF
θJC
IGBT and Diode at T
I
= 2.6A
CE
V
= 960V
CE
V
= 15V
GE
R
= 51 Ω
G
L = 5mH
Test Circuit (Figure 18)
IGBT and Diode at T
I
= 2.6A,
CE
V
= 960V,
CE
V
= 15V,
GE
R
= 51 Ω,
G
L = 5mH,
Test Circuit (Figure 18)
= 25
J
= 150
J
o
C
-2530ns
-1115ns
- 205 220 ns
- 260 320 ns
-96 - µ J
- 425 590
- 355 390
o
C,
-2125ns
-1115ns
- 225 240 ns
- 360 420 ns
-96 - µ J
- 800 1100 µJ
- 530 580 µJ
- - 1.20
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
o
J
J
C/W
ON2
Typical Performance Curves Unless Otherwise Specified
14
12
10
, DC COLLECTOR CURRENT (A)
CE
I
FIGURE 1. DC COLLECTOR CURRENT vs CASE
8
6
4
2
0
25 75 100 125 150
50
TC, CASE TEMPERATURE (oC)
TEMPERATURE
V
= 15V
GE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B
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